HAL Id: hal-02172260 https://hal.laas.fr/hal-02172260 Submitted on 15 Jul 2019 HAL is a multi-disciplinary open access archive for the deposit and dissemination of sci- entific research documents, whether they are pub- lished or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Ga doped ZnO thin films deposited by RF sputtering for NO2 sensing L. Presmanes, V. Gunasekaran, Y. Thimont, I. Sinnarasa, A. Barnabé, P. Tailhades, Philippe Menini To cite this version: L. Presmanes, V. Gunasekaran, Y. Thimont, I. Sinnarasa, A. Barnabé, et al.. Ga doped ZnO thin films deposited by RF sputtering for NO2 sensing. The Experiment@ International Conference (Exp.at’19), Jun 2019, Funchal, Portugal. hal-02172260