Applied Surface Science 318 (2014) 305–308
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Applied Surface Science
jou rn al h om ep age: www.elsevier.com/locate/apsusc
Use of n-type semiconductor silicon as substrate material for
electrodeposition of Zn
1−x
Fe
x
alloy thin films
˙
Ismail
˙
Ilimbey
a
, Ka˘ gan Yurdal
b,∗
, Ömer Faruk Bakkalo˘ glu
a
,
˙
Ismail Hakkı Karahan
b
,
Metin Bedir
a
a
Department of Engineering Physics, Gaziantep University, Gaziantep, Turkiye
b
Department of Physics, Mustafa Kemal University, Antakya, Hatay, Turkiye
a r t i c l e i n f o
Article history:
Received 31 October 2013
Received in revised form 15 June 2014
Accepted 18 June 2014
Available online 8 July 2014
Keywords:
Electrodeposition
Zn–Fe alloys
Silicon substrate
Magnetoresistance
Thin film
a b s t r a c t
Zn
1−x
Fe
x
alloys were electrochemically deposited on semiconductor silicon substrates from sulfate bath.
Effect of bath composition on phase formation, chemical composition, crystallite shape, electrical resisti-
vity and magnetoresistance were investigated using appropriate characterization tools. It was shown that
Zn–Fe alloys can be successfully deposited directly on semiconductor silicon substrate using electrode-
position technique. Iron content in films influences crystallite size, resistivity and magnetoresistance of
films.
© 2014 Elsevier B.V. All rights reserved.
1. Introduction
Metallic thin films find important applications in electronics
industry. For this reason, deposition of metallic thin films either in
the form of pure metals or alloys have gained much importance in
the last decades. Type of substrate is important in film fabrication,
and many different substrates are being used in thin film fabrica-
tion processes. Among these, use of a semiconductor substrate for
deposition of metallic films is especially important. Because, this
combination of metals and semiconductors gives the possibility
of integrating thin film and silicon technologies. By this integra-
tion, important structures and devices can be produced, such as
ohmic contacts, Schottky barriers, nano-scaled electronic devices,
data storage media and spintronic devices. Some examples are
as follows: Oskam et al. reported deposition of n-Si/Au Schottky
junctions using electrodeposition, which are comparable to ones
prepared by evaporation or sputtering [1]. Some other applications
include data storage media and spintronic devices. Takahashi et al.
reported fabrication of metallic tips with a silicon cantilever and
multi-probe with metallic tips for probe-based ferroelectric data
storage [2–4]. Sharma et al. reported fabrication of patterned and
∗
Corresponding author. Tel.: +905327867783.
E-mail address: kaganyurdal@hotmail.com (K. Yurdal).
non-patterned metallic nanowire arrays on silicon substrate using
standard microelectronic fabrication techniques for easy integra-
tion of the nanostructures with routine silicon manufacturing [5].
In addition, there are some studies concerning fabrication of films
with magnetoresistance on silicon substrate [6,7].
Electrodeposited zinc-alloy coatings, especially with one of the
‘iron group metals’ (e.g. iron, nickel and cobalt) find important end-
uses in various industries [8–14]. Another important aspect of the
zinc metal is its use in batteries [15].
Phase composition may be complex for Zn–Fe system [16].
Among thin film production techniques, electrodeposition has
important advantages; no need for vacuum, deposition at room
temperature, ability to use aqueous solutions, control on rate of
diffusion and film structure through processing parameters, cost
effectiveness, production at large scales etc. The technique is suit-
able for fabrication of alloys which show magnetoresistance effect
[17–22]. Electrodeposition of zinc alloys with iron group metals
may exhibit “anomalous codeposition” which means that zinc is
deposited more in the film than its ratio in the solution. Many
researches have focused on preparation of these alloys [23–27].
Although Zn–Fe alloys gained attention for their corrosion prop-
erties, electrical and magnetic properties of these alloys are also
important. These alloys show magnetoresistance effect, amount of
which is dependent on the Zn and Fe content. Despite the mag-
netoresistance property of Zn–Fe alloys, to our knowledge, these
alloys haven’t been yet fabricated on a semiconductor substrate,
http://dx.doi.org/10.1016/j.apsusc.2014.06.122
0169-4332/© 2014 Elsevier B.V. All rights reserved.