Research Article January 2017 © 2017, IJERMT All Rights Reserved Page | 21 International Journal of Emerging Research in Management &Technology ISSN: 2278-9359 (Volume-6, Issue-1) Series Resistance Both Temperature and Wavelength Dependent in Silicon Solar Cell under Steady State Ibrahima DIATTA 1 , Ibrahima LY 2 , Mamadou WADE 2 , Marcel Sitor DIOUF 1 , Youssou TRAORE 1 , Mor NDIAYE 1 , Senghane MBODJI 3 and Grégoire SISSOKO 1 1 Laboratoire des Semi-conducteurs et d’Energie Solaire, Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, Sénégal 2 Ecole Polytechnique de Thiès, Thiès, Sénégal 3 Université Alioune DIOP de Bambey-Sénégal DOI: 10.23956/ijermt/V6N1/101 Abstract: he excess minority carrier junction recombination velocity limiting the open circuit Sfoc and the experimental series resistance of an exposed solar cell to temperature under monochromatic illumination in static regime were determined. It is determined by the photovoltage difference and the open circuit photovoltage Voc. Expression of junction recombination velocity limiting the open circuit has determined the experimental series resistance values. Expressions of photocurrent density and photovoltage are obtained from excess minority carrier density. Keywords: solar cell - junction recombination velocity - open circuit – wavelength - series resistance - temperature. I. INTRODUCTION The series resistance is caused by electrons movement through the emitter and the solar cell base, the contact resistance between the silicon and the metal grids resistance at front and back side [1- 3]. In this paper, we study influence of both temperature and wavelength on series resistance of silicon solar cell in static regime under monochromatic illumination. This resistance and Sfoc are determined from the I-V characteristic. The experimental series resistance values are also determined from the series resistance curves calibration versus minority carrier junction recombination velocity Sf. II. THEORY The studied silicon solar cell is an n+pp+ BSF type. It is represented by the following figure: Figure 1 : Silicon solar cell n + pp + type When the solar cell is illuminated, there is electron-hole pairs generation in the base. The excess minority carrier density in the base is modeled by the following continuity equation:    2 ² ² x x gx x L D       (1) With δ () is the minority carrier density at the depth x in the base g(x) is the carrier generation rate at the depth x in the base, it is expressed as:              1 x gx R e       (2) Where α(λ) and R(λ) represent respectively absorption and reflection coefficient of the material for a given wavelength ; T