1326 DOUBLE GATE-CONTROLLED DUAL BASE SOI BIPOLAR JUNCTION TRANSISTOR: A PROMISING CANDIDATE FOR HIGH SPEED ELECTRONICS Shehrin Sayed, M. Ziaur Rahman Khan Dept. Elec. and Elect. Eng., Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh: zrkhan@eee.buet.ac.bd) Received 10-10-2012, final form 29-10-2012, online 1-11-1012 ABSTRACT A silicon-on-insulator double gate-controlled dual base bipolar junction transistor (BJT) is proposed here. The device structure is same as SOI MOSFET with two body contacts. Here a novel mode of operation of this existing structure has been investigated. The device combines two lateral BJTs and features two MOS gates to control the BJT action of the device. The neutral base region in which the BJT action takes place and carrier concentration profile in the base region can be modulated by the two MOS gate biases which in turn modulate the current gain of the device. This novel transistor’s multiple bases and extra functional flexibility may give rise to exciting circuit opportunities for analog, RF, mixed signal and digital applications. Keywords: FD SOI MOSFET, Dual Base BJT, Multi-gate Transistors, Emitter Efficiency, Surface Recombination Rate. I. INTRODUCTION Bipolar Junction Transistors (BJTs) are attractive for speed, low noise performance and current driving capability while the complementary MOS transistors offer the low standby power consumption and high- packaging density. An increase in interest in the fabrication of CMOS transistors and bipolar transistors in a Journal of Electron Devices, Vol. 16, 2012, pp. 1326-1333 © JED [ISSN: 1682 -3427 ]