International Journal of Physics (IJP), Volume 1, Issue 1, January- June 2013 19 ELECTRICAL PROPERTIES OF CHEMICAL BATH DEPOSITED CdS THIN FILMS D Kathirvel a* , N Suriyanarayanan b , S Prabahar c , S Srikanth c a* Department of Physics, Kalaignar Karunanidhi Institute of Technology,Coimbatore b Department of Physics, Government College of Technology, Coimbatore, India. c Department of Physics, Tamilnadu College of Engineering, Coimbatore, India. ABSTRACT Thin films of CdS of different thickness have been prepared on glass substrates in various temperatures by Chemical bath deposition. Electrical resistivity measurements were carried out in four-probe vander pavu geometry at room temperature. Resistivity of CdS thin films is about 10 8 cm. Typical linear dark I-V characteristics of the CdS thin films and ohmic behavior is observed. Keywords: Electrical resistivity, Chemical bath deposition, CdS thin films, I-V characteristics. INTRODUCTION Chemical bath deposition is a well known deposition process for Chalcogenides such as Cd, Zn, Co, Hg, Pb sulphides and selenides [1]. The Chemical Bath Deposition (CBD) method, being less expensive than other thin film deposition methods allows for the manufacture of relatively low cost devices especially light detectors, light energy conversion cells and thin films field effect transistor [2, 3]. CdS in an important semiconductor material with very narrow band gap (2.10 to 2.40eV). The CdS material INTERNATIONAL JOURNAL OF PHYSICS ISSN: (Print) ISSN: (Online) Volume 1, Issue 1, January- June (2013), pp. 19-25 © IAEME: www.iaeme.com/ijp.html IJP © I A E M E