Purdue University Purdue e-Pubs Birck and NCN Publications Birck Nanotechnology Center 1-1-2009 Performance Comparisons of Tunneling Field- Efect Transistors made of InSb, Carbon, and GaSb- InAs Broken Gap Heterostructures Mathieu Luisier Purdue University - Main Campus, mluisier@purdue.edu Gerhard Klimeck Network for Computational Nanotechnology, Purdue University, gekco@purdue.edu Follow this and additional works at: htp://docs.lib.purdue.edu/nanopub Part of the Nanoscience and Nanotechnology Commons his document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact epubs@purdue.edu for additional information. Luisier, Mathieu and Klimeck, Gerhard, "Performance Comparisons of Tunneling Field-Efect Transistors made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures" (2009). Birck and NCN Publications. Paper 502. htp://docs.lib.purdue.edu/nanopub/502