October 2006 University of Sharjah Journal of Pure & Applied Sciences Volume 3, No. 3 1 FABRICATION OF Pb X S 1-X FILMS PHOTOCONDUCTIVE DETECTORS M.F.A. Alias # , E.M.N. Al-Fawade # , A.A. Alnajjar* and A.A.J. Al-Douri* # Physics Department, Science College, University of Baghdad, Baghdad, Iraq * Basic Science Department, Arts and Science College, University of Sharjah Sharjah, United Arab Emirates ABSTRACT A polycrystalline Pb x S 1-x alloys with various Pb content (0.50, 0.51, 0.52, 0.54 and 0.55) have been prepared successfully. A photoconductive detector Pb x S 1-x film has been fabricated by depositing 1.5µm of Pb x S 1-x on Si (n- type) substrate with (111) direction by flash thermal evaporation at different x content and annealing temperature (T a ). Photoconductive properties, I-V characteristic, Spectral Response (R λ ), Quantum Efficiency ( η), Noise Equivalent Power (NEP), Specific Detectivity (D*), and time constant have been studied. The study of detector parameters exhibited two peaks for spectral , quantum efficiency and specific detectivity Keywords: Photoconductive Pb x S 1-x detector, photoconductive parameters. λϼΨϟ ا ΋ Βγ ﺎحϨΑ و ﺮتπΣ Pb x S 1-x صλ ϟ اϦϣ ϔϠΘΨϣ ΐδ Ϩ Α و) 0.50 ، 0.51 ، 0.52 ، 0.54 ، 0.55 ( ﻬﺎϨϣϴθ أϴπΤ Η ϢΗ وϴΨΒΘϟ اϘϳ τ Α ري اΤ ϟ اϲπ ϴ ϣ ϟ ا وϒη آϊϴϨμΘ Α ϨϤϗ Ϣ، ﻬﺎμ ΋ μΧ γ ادرΖϤ Η ) β ϣ ( Ϟ ϴ λ Θϟ ا ﻮعϧ Ϧϣ سδΣ - ϲ΋ π ϟ ا. Ϙϴϗ رϘΒσ ΐϴγ Η τγ اΑβ Ϥ ϟ اϊϴϨμΘ Α ϨϤϗ ﻜﻬﺎϤγ 1.5 Θϣ ﻜﺮوϳ ϣ ϴθ أϦϣ Pb x S 1-x ϴϠϴλ Θϟ ا ﻮعϧ Ϧϣ ﻜﻮنϴϠδϟ اϞλ ϣϪΒηϦϣ ϳ ﻮرϠΑ ϗ ϗ رϠ ϋ n- وذي ﻮريϠΒϟ اϩ ﺠﺎΗϻ ا) 111 .( ϞϤθΗ ϔϠΘΨϣ ﺎتϟ όϤΑ β Ϥ ϟ اϊϴϨμΗ ϢΗ : 1 - صλ ϟ اϦϣ ϔϠΘΨϤ ϟ اΐδ Ϩ ϟ ا) x ( 2 - ϳ ارΣ ﺎتϟ όϣ ) Ϧϳ ϠΗ ( ϔϠΘΨϣ . κ ΋ μΧ وΑ ﺠﺎΘγ ا ﺎرΒΘΧ اϢΗ Ϥ آϒη ϟ ا) β Ϥ ϟ ا( وϴ΋ π ϟ اϴϠϴλ Θϟ اϪμ ΋ μΧ ﺎسϴϘΑ ﺎرϴΗ ϊϨμϤ ϟ اβ ϤϠϟ ϴϔθ ϟ ا ﺪرةϘϟ وا ﺎءο π Ϡ ϟ Όϓ ﻜﺎϤϟ ا ﺪرةϘϟ واϴϤ ϟ ا ﺎءةϔ ϟ واϴϔϴτϟ اΑ ﺠﺎΘγϻ ا وϴΘϟ ϓ . 1. INTRODUCTION The need for high speed un-cooled detector ignited the research on narrow band gap compound semiconductors. High-speed un-cooled infrared (IR) detectors from PbS system are in high demand for many