Quantum Modeling and Design of Carbon Nanotube (CNT) Embedded Nanoscale MOSFETs Akin Akturk, Gary Pennington and Neil Goldsman Department of Electrical and Computer Engineering University of Maryland, College Park, MD 20742, USA akturka@glue.umd.edu , garyp@glue.umd.edu , neil@eng.umd.edu Abstract We propose a novel MOSFET design that embodies single wall zig-zag semiconducting Carbon Nanotubes (CNT) in the channel, as shown in Fig. 1. Investigations show that CNTs have high low-field mobilities, which can be as great as 2x10 5 cm 2 /Vs. Thus we predict that MOSFET performance can be improved by embedding CNTs in the channel. To investigate the performance of the new CNT-MOSFET device, we develop a methodology that connects CNT modeling to MOSFET simulations. Our calculations indicate that by forming high mobility regions in the channel, MOSFET performance can be boosted. The gain in the drive current is as much as 30-40% over standard MOSFETs. Our predictions are based on calculations obtained from our CNT Monte Carlo (MC) simulator [1]-[3] and quantum based device solver [4]-[6]. Keywords: Single-Wall Zig-Zag Carbon Nanotube, CNT Mobility Model, CNT Embedded MOSFET Design, Simulation.