IOSR Journal of VLSI and Signal Processing (IOSR-JVSP) Volume 4, Issue 1, Ver. II (Jan. 2014), PP 22-25 e-ISSN: 2319 – 4200, p-ISSN No. : 2319 – 4197 www.iosrjournals.org www.iosrjournals.org 22 | Page III-V Mosfet as Advance Low Dimensional Transistor 1 P.Deepika, 2 E.Subhasri, 3 S.D.Shandeep, 4 N.Pavithra Pg Scholar, Department Of Ece Bannari Amman Institute Of Technology, Sathyamangalam Abstract: The workhorse of the present electronics industry, silicon MOSFET, is having a unique attribute; its logic characteristics improve as its dimensions are reduced. Without further reductions in operating voltage, future scaling may not be feasible. One possible solution is to introduce a new channel material in which charge carriers travel at a much higher velocity than in silicon and this would allow a reduction in voltage without a loss of performance. This factor has drowned the attention of research community around the world towards III–V compound semiconductors. No other family of materials currently being considered to replace the silicon channel in a MOSFET has such an impressive list of attributes. Today, III –V CMOS technology is a mainstream part of semiconductor research. Their future role has recently been recognized in the International Technology Roadmap for Semiconductors 7.The application of simulation tools in the development of new processes and novel device structures has become a worthwhile and an alternative to the experimental route. For all these tasks the technology computer-aided design (TCAD) was coined. I. Introduction Driven by tremendous advances in lithography, the semiconductor industry has followed Moore‟s law by shrinking transistor dimensions continuously for the last 40 years. The big challenge going forward is that continued scaling of planar, silicon, CMOS transistors will be more and more difficult because of both fundamental limitations and practical considerations as the transistor dimensions approach ten nanometers. The issues at small gate lengths are many fold. First, transistor scaling increases the number of gates on a chip and the operating frequency. To prevent the chip from overheating, the power dissipation should be limited, which requires lowering the power supply voltage while maintaining the ability to deliver high on currents for each new generation of technology. Secondly, the drain bias decreases the energy barrier height between the source and channel in a transistor due to 2D electrostatics. Degraded short channel effects become more significant as the gate length gets shorter, and the increased off-state leakage has pushed the standby power to its practical limit. Thirdly, the accompanying scaled oxide thickness provides better gate control of the channel potential, but this inevitably increases the gate leakage and makes it very difficult to obtain both high on-currents and low off- currents at lowered supply voltage. Lastly, the parasitic resistance and capacitance have become comparable to, or even larger than the continuously decreasing intrinsic channel capacitance and resistance, which may provide a practical limit to scaling [1]. A 45 nm process based on high-k, metal gate, and strained silicon was introduced in 2007 [2]. With such technologies, scaling will continue to the 32 nm node and beyond [3].. Further improvements in transistor speed and performance may have to come from new channel materials. To address the scaling challenge, both industry and academia have been investigating alternative device architectures and materials, among which III-V compound semiconductor transistors stand out as promising candidates for future logic applications because their light effective masses lead to high electron mobilities and high on-currents, which should translate into high device performance at low supply voltage. II. Compounds The III–V compound semiconductors, such as GaAs, AlAs, InAs, InP and their ternary and quaternary alloys, combine elements in columns III and V of the periodic table. Some III–V compounds have unique optical and electronic properties. Their ability to efficiently emit and detect light means they are often used in lasers, light-emitting diodes and detectors for optical communications, instrumentation and sensing. A few, notably GaAs, InGaAs and InAs, exhibit outstanding electron transport properties. Transistors based on these materials are at the heart of many high-speed and high-frequency electronic systems6. In fact, there is a large and mature industry manufacturing. III–V integrated circuits in great volumes for applications as diverse as smart phones, cellular base stations, fibre-optic systems, wireless local-area networks, satellite communications, radar, radioastronomy and defence systems. The recent widespread use of handheld devices and their enormous consumption of data has been a boon to the III–V integrated-circuit industry, which is now characterized by highly automated and rigorous large-scale manufacturing, relatively large-area wafers, sophisticated device and circuit design tools,