1 3 Microsyst Technol DOI 10.1007/s00542-014-2149-0 TECHNICAL PAPER Effect of electric potential into conductance silicon nanowire distribution A. Wesam Al-Mufti · U. Hashim · Tijjani Adam Received: 18 December 2013 / Accepted: 27 March 2014 © Springer-Verlag Berlin Heidelberg 2014 Xuge Fan et al. described in biosensors based on silicon nanowire field effect transistors (SiNW-FETs) have drawn huge amounts of attention, due to their ultra sensitivity, selectivity, label-free and real-time detection abilities in them study briefly summarize major fabrication methods in synthesizing SiNW-FETs and selectively describe some applications of SiNW-FET biosensors in DNA detection over the past few years. Some key results from each arti- cle are summarized, involving the concept and mecha- nism behind each sensor, with the aim of stimulating more efforts in developing SiNW-FET biosensors for detecting DNA (Hashim et al. 2010). They said in results is biosensors based on SiNW-FET hold tremendous advantages (such as ultrasensitive, label- free, direct, selective and rapid electrical test, etc.) in the DNA detection. Also, SiNW-FET biosensors also reveal the capability of an obvious discrimination against mismatched DNA sequences. On other hand, lots of different methods in SiNW-FET biosensor fabrication and how to accurately detect lower DNA species level range should still being investigated by researchers. From our own perspective, we infer how to effectively configurate single SiNW-FET array as biosensors and how to efficiently finish surface functionalization modification of SiNW-FETs might be two important research aspects for DNA detection based on SiNW-FET biosensor. In addition, multiplex detection and permitting direct integration with electrical readout circuits are also worth being put into more efforts, which would also improve, to some extent, the accuracy, selectivity, sen- sitivity, and portability of DNA biosensors (Hashim et al. 2012). Also other studying mention from, Li et al. investigated in silicon nanowire silicon nanowires based thermoelectric device (TED) has potential applications in areas have a lot of applications as chip level cooling/energy harvesting. Abstract Distribution of electric potential and space charge in a silicon nanowire has been investigated. First, the model of the nanowire is generated with concern the physics and geometry. The physics of the nanowire has been modelled through set partial differential equations which were elucidated using finite element method. The simulation experiments by model compute distribution of potential, space charge and determined. The result nanow- ire by using COMSOL shows different dimension and affect that to space charge and electrical potential. 1 Introduction Currently, COMSOL Multiphysics package (Gouthami et al. 2011). Is a powerful interactive environment for mod- elling and simulation of various kinds of scientific and engineering problems based on partial differential equa- tions. It facilitates development of new models associated with problems in science and engineering and allows the researcher to add physics to the model with appropriate boundary conditions (Nair 2007). The researcher can spec- ify a system of equations representing the system behav- iour. COMSOL provides necessary tools to solve the equa- tions using finite element methods. In the current context, COMSOL will be used to model the electrostatic behav- iour of nanowire in the presence of a DNA molecule in the proximity of a fictionalization layer around the nanowire (Nair 2007; Gouthami et al. 2011; Siegel et al. 1993). A. Wesam Al-Mufti (*) · U. Hashim · T. Adam Nano Structure Lab on Chip Research Group Institute Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Malaysia e-mail: mohamenw@gmail.com; uda@unimap.edu.my