Electrical and Electronics Engineering: An International Journal (ELELIJ) Vol 4, No 3, August 2015 DOI : 10.14810/elelij.2015.4303 25             Turja Nandy * , Arin Dutta, Zahid Hasan Mahmood Electrical and Electronic Engineering, University of Dhaka Dhaka 1000, Bangladesh ABSTRACT In this review, we compare the distinct properties of Carbon Nanotube Field Effect Transistor (CNTFET) based applications with MOSFET based applications in memory and digital electronics technology. In nanoelectronics circuitry, CNTFET has opened new dimensions with extreme opportunities of improvement in circuit performance due to its extreme mobility, ballistic conduction and so forth. Apart from being an excellent conductor, CNTFET can also be used as a memory unit for its good stability in storing a data bit and as digital circuits (multi-valued logic gates) for its better PDP and sensitivity. This paper discusses the design and read-write mechanisms of 6T and 8T CNTFET SRAM cell and a comparative study among themselves based on their corresponding advantages and disadvantages. Moreover, superiority of CNTFET SRAM over MOSFET SRAM is analyzed in terms of certain phenomena (such as scattering, defect- tolerance and ability to work in low power supply) observed in them. At last, different types of ternary logic gates and how they will persevere the limitations of MOSFET logic gates with its PDP value, less power dissipation and better longevity have been discussed. KEYWORDS CNTFET, SRAM, SNM, ternary logic, PDP. 1. INTRODUCTION Since the invention and fabrication of Carbon Nanotubes (CNT) in 1991 by Japanese researcher Sumio Iijima and later on by Al Harrington and Tom Maganas, it has been an attractive topic of research for researchers and engineers across the world. Following that, it has constantly been experimented to be used in nanoelectronic devices to overcome the limitations of conventional silicon devices. In recent years, CNTFET has also been introduced in memory technology and digital electronics. SRAM and logic gates are such applications which can be structured by CNTFET. Because of its ability to store data for longer period and less power delay product, CNTFET has emerged as a possible and promising replacement of MOSFET in structuring memory devices including storage cells [1]. Memory cells like SRAM (Static Random Access Memory) and DRAM (Dynamic Random Access Memory) have been designed in different ways with different architectures (actually different number of transistors) along the years. Again, to perform digital operations, logic gate is an inevitable part in design procedure and CNTFET can also be implemented in multi-valued logic gate architecture for its tremendous performance over