Available online at www.sciencedirect.com
Journal of the European Ceramic Society 31 (2011) 1865–1871
Nanoscale elastic–plastic deformation and stress distributions of the
C plane of sapphire single crystal during nanoindentation
W.G. Mao
a,b
, Y.G. Shen
a,∗
, C. Lu
c
a
Department of Manufacturing Engineering and Engineering Management (MEEM), City University of Hong Kong, Kowloon, Hong Kong
b
Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education, Xiangtan University, Hunan 411105, China
c
Department of Mechanical Engineering, Curtin University, Perth, WA 6845, Australia
Received 31 August 2010; received in revised form 27 January 2011; accepted 7 April 2011
Available online 4 May 2011
Abstract
The nanoscale elastic–plastic characteristics of the C plane of sapphire single crystal were studied by ultra-low nanoindentation loads with a
Berkovich indenter within the indentation depth less than 60 nm. The smaller the loading rate is, the greater the corresponding critical pop-in loads
and the width of pop-in extension become. It is shown that hardness obviously exhibits the indentation size effect (ISE), which is 46.7 ± 15 GPa at
the ISE region and is equal to 27.5 ± 2 GPa at the non-ISE region. The indentation modulus of the C plane decreases with increasing the indentation
depth and equals 420.6 ± 20 GPa at the steady-state when the indentation depth exceeds 60 nm. Based on the Schmidt law, Hertzian contact theory
and crystallography, the possibilities of activation of primary slip systems indented on the C surface and the distributions of critical resolved shear
stresses on the slip plane were analyzed.
© 2011 Elsevier Ltd. All rights reserved.
Keywords: Single crystal sapphire; Nanoindentation; Critical resolved shear stress; Multiple pop-in events; Mechanical properties
1. Introduction
Sapphire (-Al
2
O
3
) is an important crystal material due
to its high hardness, chemical inertness, superior mechanical
performance, and thermodynamic stability.
1–3
Generally, sap-
phire is brittle and its brittle-to-ductile transition temperature is
∼1373 K. However, the plastic deformation of sapphire crystals
may occur under low loads at room temperature.
4
Recently, the
evaluation of the initial stages of plasticity and elastic–plastic
deformation properties of sapphire with different surface orien-
tations at room temperature have been extensively investigated
by nanoindentation tests.
4–12
These studies show that single
and/or multiple displacement discontinuity (pop-in) events dur-
ing loading are found to distinguish between the fully elastic
and the elastic-plastic regimes, associated with the nucleation of
dislocations. As we know, the C plane (0 0 0 1) of sapphire is gen-
erally selected as a calibration medium during nanoindentation
13
and substrate in the preparation of many kinds of functional
∗
Corresponding author. Tel.: +852 2784 4658; fax: +852 2788 8423.
E-mail address: meshen@cityu.edu.hk (Y.G. Shen).
thin film/substrate systems.
14,15
It is necessary to study the
mechanical properties of the C plane under different size scales
and measurement conditions. Although many studies have been
done on elastic-plastic behaviors of the C plane by micro-
/nano-indentation with relatively large Berkovich or spherical
indenters, the interpretation of indentation results obtained at
room temperature is not straightforward because these inden-
tation measurements are strongly affected by factors such as
the anisotropic elasticity of sapphire, surface roughness, the
radius and shape of indenter tip, loading rate and indentation
depth.
4–8
In this paper, the nanoscale elastic/plastic deformation
and mechanical properties of the C plane have been systemati-
cally studied by depth-sensing nanoindentation experiments at
room temperature. The contact area function and radius of the
Berkovich tip were carefully calibrated under very small inden-
tation depth by nanoindentation and atomic force microscopy
(AFM) instruments. The mechanical properties and surface
deformation mechanism of sapphire crystal indented on the C
plane were analyzed under the anisotropic elastic character-
istic and small indentation depth. The critical resolved shear
stresses (CRSS) at slip planes were evaluated with the aid of the
Hertzian contact theory, compared with the corresponding the-
0955-2219/$ – see front matter © 2011 Elsevier Ltd. All rights reserved.
doi:10.1016/j.jeurceramsoc.2011.04.012