PLEASE SCROLL DOWN FOR ARTICLE This article was downloaded by: [INFLIBNET India Order] On: 13 October 2008 Access details: Access Details: [subscription number 792843137] Publisher Taylor & Francis Informa Ltd Registered in England and Wales Registered Number: 1072954 Registered office: Mortimer House, 37-41 Mortimer Street, London W1T 3JH, UK Radiation Effects and Defects in Solids Publication details, including instructions for authors and subscription information: http://www.informaworld.com/smpp/title~content=t713648881 Influence of activation of Si 29+ ion-implantation in GaAs on ohmic contact resistance and electrical performances of MESFETs G. Sai Saravanan a ; K. Mahadeva Bhat a ; H. P. Vyas b ; K. Muraleedharan c ; A. P. Pathak d a Gallium Arsenide Enabling Technology Centre, Hyderabad, India b Solid State Physics Laboratory, Delhi, India c Defence Metallurgical Research Laboratory, Hyderabad, India d School of Physics, University of Hyderabad, Central University, Hyderabad, India Online Publication Date: 01 September 2008 To cite this Article Saravanan, G. Sai, Bhat, K. Mahadeva, Vyas, H. P., Muraleedharan, K. and Pathak, A. P.(2008)'Influence of activation of Si 29+ ion-implantation in GaAs on ohmic contact resistance and electrical performances of MESFETs',Radiation Effects and Defects in Solids,163:9,737 — 748 To link to this Article: DOI: 10.1080/03067310701643014 URL: http://dx.doi.org/10.1080/03067310701643014 Full terms and conditions of use: http://www.informaworld.com/terms-and-conditions-of-access.pdf This article may be used for research, teaching and private study purposes. Any substantial or systematic reproduction, re-distribution, re-selling, loan or sub-licensing, systematic supply or distribution in any form to anyone is expressly forbidden. The publisher does not give any warranty express or implied or make any representation that the contents will be complete or accurate or up to date. The accuracy of any instructions, formulae and drug doses should be independently verified with primary sources. The publisher shall not be liable for any loss, actions, claims, proceedings, demand or costs or damages whatsoever or howsoever caused arising directly or indirectly in connection with or arising out of the use of this material.