Introductory invited paper On the extraction of the source and drain series resistances of MOSFETs F.J. GarcõÂa SaÂnchez a , A. Ortiz-Conde a, *, J.J. Liou b a Departamento de Electro Ânica, Universidad Simo Ân BolõÂvar, Apartado 89000, Caracas 1080-A, Venezuela b Department of ECE, University of Central Florida, Orlando, FL 32816-2450, USA Received 20 February 1999 Abstract This article reviews and scrutinizes various proposed methods to extract the individual values of drain and source resistances (R D and R S ) of MOSFETs, which are important device parameters for modeling and circuit simulation. In general, these methods contain three basic steps: (1) the extraction of the total drain and source resistance (R D  R S ); (2) the extraction of the dierence between the drain and the source resistances (R D  R S ); and (3) the calculation of R D and R S from the knowledge of (R D  R S ) and (R D  R S ). These methods are tested and compared in the environments of circuit simulator, device simulation and measurements. # 1999 Elsevier Science Ltd. All rights reserved. 1. Introduction The drain and source parasitic resistances, R D and R S , of a MOSFET can be modeled by considering the intrinsic device with R D and R S connected in series with its intrinsic drain and source, respectively, as shown in Fig. 1. If the current that ¯ows through the device channel is assumed to be the same as that ¯ows through the drain and source series resistances, then the MOSFET's intrinsic gate-source voltage (V GS ), drain-source voltage (V DS ), and body-source voltage (V BS ) can be de®ned in terms of the drain current (I d ) and the extrinsic voltage counterparts V gs , V ds , and V bs as V GS  V gs  I d R S , 1 V DS  V ds  I d R S  R D , 2 V BS  V bs  I d R S : 3 Therefore, the extraction of the intrinsic device's par- ameters from experimental data requires either the knowledge of R S and R D , or the availability of a method capable of performing the extraction of the intrinsic model parameters independently of R S and R D [1±8]. The extraction of the total drain and source resist- ance (R D  R S ) will ®rst be covered in this article. Next, we will discuss the extraction of the dierence between the two resistances (R D  R S ), based on the physical insight provided by device simulation. The knowledge of these two quantities will allow the deter- mination of the individual values of R D and R S . 2. Extraction of total drain and source series resistance The extraction of the individual values of the source Microelectronics Reliability 39 (1999) 1173±1184 0026-2714/99/$ - see front matter # 1999 Elsevier Science Ltd. All rights reserved. PII: S0026-2714(99)00028-1 www.elsevier.com/locate/microrel * Corresponding author. Tel.: +582-9064010; fax: +582- 9064025. E-mail address: ortizc@usb.ve (A. Ortiz-Conde)