Journal of Electron Spectroscopy and Related Phenomena 174 (2009) 22–27
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Journal of Electron Spectroscopy and
Related Phenomena
journal homepage: www.elsevier.com/locate/elspec
The electronic structure of pentacene revisited
S. Berkebile
a
, G. Koller
a
, A.J. Fleming
a
, P. Puschnig
b
, C. Ambrosch-Draxl
b
,
K. Emtsev
c
, T. Seyller
c
, J. Riley
d
, M.G. Ramsey
a,∗
a
Institute of Physics, Karl-Franzens University Graz, Universitätsplatz 5, 8010 Graz, Austria
b
Chair of Atomistic Modelling and Design of Materials, University of Leoben, Franz-Josef-Straße 18, 8700 Leoben, Austria
c
Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen, Germany
d
Department of Physics, La Trobe University, VIC 3086, Australia
article info
Article history:
Available online 14 April 2009
Keywords:
Pentacene
Photoemission
Band dispersion
Electronic structure
abstract
Recently, there have been reports of the valence band photoemission of pentacene films grown on various
substrates with particular emphasis on the highest occupied molecular orbital (HOMO) and its disper-
sion. In various works, evidence for HOMO band dispersion as high as 0.5eV, even for polycrystalline
films, has been presented. In apparent contradiction to these results, we have previously reported a band
dispersion of only 50 meV, measured on a well characterised film with a single polymorph and single
crystalline orientation, 5A(0 2 2). Here, we first present the two-dimensional momentum distribution of
the HOMO of a 5A(0 2 2) film. Then the development of the valence band spectra for films grown at room
temperature and low temperature are compared, and we show that morphological aspects can lead to
the apparent observation of high HOMO dispersion. Finally, with the aid of the two-dimensional momen-
tum distribution of the HOMO, we show that a reasonably large dispersion (0.25 eV) does indeed exist in
5A(0 2 2).
© 2009 Elsevier B.V. All rights reserved.
Ultraviolet photoemission spectroscopy (UPS) has an important
place in the study of organic films and their interfaces, not the
least because of the pioneering work of K. Seki and W. Salaneck
which have emphasized the direct information it yields regarding
the valence band all important to the opto-electronic proper-
ties of these materials. Here, with the example of pentacene, we
illustrate some of the pitfalls in interpreting UPS and then demon-
strate the capabilities of modern angle-resolved instrumentation.
The electronic structure of pentacene (5A) has recently attracted
considerable interest particularly because of the high mobilities
reported in 5A thin films. Consequently, there have been reports
of the valence band photoemission of films grown on various sub-
strates with particular emphasis on the HOMO and its dispersion
[1–6]. In various works, evidence for HOMO band dispersion as
high as 0.5 eV, even for polycrystalline films, has been presented.
Recently, we have reported the intra- and intermolecular band
structure of 5A measured on a well characterised film with a
single polymorph (the polymorph determined by Holmes et al.
[7,8]) and single crystalline orientation, 5A(0 2 2). In these films,
the intermolecular band width of the HOMO, in a direction per-
pendicular to the molecular axis, was shown to be surprisingly
small (50 meV) [6], in apparent contradiction to the previously
∗
Corresponding author.
E-mail address: ramsey@uni-graz.at (M.G. Ramsey).
reported dispersions [1]. Here, we first present the momentum
distribution of the HOMO of a 5A(0 2 2) film. Then the devel-
opment of the valence band spectra for films grown at room
temperature and low temperature are compared, and we show
that morphological aspects can lead to the apparent observation of
high HOMO dispersion. Finally, with the aid of momentum maps
of the HOMO, we show that indeed a reasonably large disper-
sion, in agreement with band structure calculations, does exist in
5A(0 2 2).
The pentacene films were grown and measured in situ in ultra
high vacuum (UHV). The p(2 × 1) oxygen reconstructed Cu(1 1 0)
substrate surface was prepared by cleaning the copper crystal by
repeated cycles of Ar
+
-ion bombardment and annealing at 800 K.
The clean crystal was exposed to 40 L (1 L = 1 × 10
-6
Torr · s) oxy-
gen at 600 K. The pentacene (Fluka) was deposited in situ from a
thoroughly degassed evaporator such that the pressure in the sys-
tem remained in the 10
-10
mbar range during film growth. Nominal
growth rates of 2–5 Å min
-1
, as monitored by a quartz microbal-
ance assuming a density of 1.33 g cm
-3
, were used. The geometric
and electronic structure and the morphology of these films has
been fully characterised with UV- and X-ray photoemission, X-
ray absorption spectroscopy (NEXAFS), X-ray diffraction (XRD, both
/2 scans and pole figure analysis), low energy electron diffraction
and reflectance difference spectroscopy. Unless otherwise stated,
films were grown at 100K and measured at room temperature
(300 K).
0368-2048/$ – see front matter © 2009 Elsevier B.V. All rights reserved.
doi:10.1016/j.elspec.2009.04.001