Author's Accepted Manuscript Phase transition induced double-Gaussian barrier height distribution in Schottky diode A. Bobby, S. Verma, K. Asokan, P.M. Sarun, B.K. Antony PII: S0921-4526(13)00509-7 DOI: http://dx.doi.org/10.1016/j.physb.2013.08.037 Reference: PHYSB307857 To appear in: Physica B Received date: 12 July 2013 Revised date: 21 August 2013 Accepted date: 24 August 2013 Cite this article as: A. Bobby, S. Verma, K. Asokan, P.M. Sarun, B.K. Antony, Phase transition induced double-Gaussian barrier height distribution in Schottky diode, Physica B, http://dx.doi.org/10.1016/j.physb.2013.08.037 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. www.elsevier.com/locate/physb