Anisotropic Dielectric and Electrical Properties of Hot-Forged SrBi 4 Ti 4 O 15 Ceramics Sanjeeb K. Rout* and Prema K. Barhai Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi 835215, India Ela Sinha Department of Physics, National Institute of Technology, Rourkela, Orissa 769008, India Ali Hussain School of Materials Science and Engineering, University of Ulsan, Ulsan 680749, Republic of Korea III W. Kim Department of Physics, University of Ulsan, Ulsan 680749, Republic of Korea The effect of grain orientation on the dielectric and electrical properties of SrBi 4 Ti 4 O 15 ceramics are studied by impedance and modulus spectroscopy. The degree of orientation calculated from the X-ray diffraction pattern is found to be 94.2% along the c-axis of the crystal structure. The ratio of permittivity along the perpendicular to parallel direction is found to be B2.5 at the Curie temperature. The nonsuperimposition of the normalized Z 00 and M 00 versus frequency plot revealed that the conduction is localized and deviate from ideal Debye-like behavior. The conduction mechanism has been explained on the basis of jump relaxation model. Introduction Bismuth layer structure ferroelectric (BLSF) ce- ramic materials are very promising for piezoelectric res- onator applications because of their small coupling Int. J. Appl. Ceram. Technol., 7 [S1] E114–E123 (2010) DOI:10.1111/j.1744-7402.2009.02453.x Ceramic Product Development and Commercialization *skrout@bitmesra.ac.in, drskrout@gmail.com r 2009 The American Ceramic Society