Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron x-ray topography This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2002 Semicond. Sci. Technol. 17 1081 (http://iopscience.iop.org/0268-1242/17/10/309) Download details: IP Address: 134.226.254.162 The article was downloaded on 12/08/2013 at 21:08 Please note that terms and conditions apply. View the table of contents for this issue, or go to the journal homepage for more Home Search Collections Journals About Contact us My IOPscience