Hierarchical growth of SnO
2
nanostructured films
on FTO substrates: structural defects induced by
Sn(II) self-doping and their effects on optical and
photoelectrochemical properties†
Hongkang Wang,
ab
Sergii Kalytchuk,
bc
Haihua Yang,
bc
Lifang He,
d
Chenyan Hu,
c
Wey Yang Teoh
c
and Andrey L. Rogach
*
b
Direct hydrothermal growth of Sn(II)-doped SnO
2
films on fluorine-doped tin oxide (FTO) substrates results
in the formation of upstanding SnO
2
nanosheet arrays covered by hierarchical SnO
2
nanoflowers. The n-
type semiconductor films show extended photoresponse in the visible spectrum arising from the
coexistence of Sn(II) dopant ions and oxygen vacancies in these hierarchical SnO
2
nanostructures, which
leads to a narrowed bandgap. Photoluminescence spectroscopy revealed that the emission in the UV,
blue and red spectral ranges is related to the evolution of Sn(II) dopants and oxygen vacancies with
annealing temperature, whereas oxygen vacancies are mostly responsible for visible emission. The Sn(II)-
doped SnO
2
films show higher photocurrent when sensitized with narrow bandgap CdS nanoparticles,
serving as efficient electron acceptors.
1. Introduction
Chemically robust, transparent, and efficient semiconductor
oxide electrodes are essential components in solar harvesting
devices, especially those for photovoltaic solar cells and pho-
toelectrochemical hydrogen production, where light penetra-
tion to reach the coated active layer is necessary.
1–5
For such
purposes, tin dioxide (SnO
2
) in the form of a uorine-doped tin
oxide (FTO) lm on glass is one of the most widely used base
substrate for electrode design.
6
This is largely due to its high
electron mobility (100–200 cm
2
V
1
s
1
), which is of several
magnitudes higher than that of anatase TiO
2
(0.1–1 cm
2
V
1
s
1
) or porous TiO
2
(10
2
cm
2
V
1
s
1
).
7–9
Besides, SnO
2
lms in
a more general sense are versatile oxide semiconductor mate-
rials that nd a wide range of applications from lithium-ion
batteries, gas sensing to phosphor materials.
6,10–13
Extensive efforts are ongoing in designing of SnO
2
arrays
with controlled morphologies on various transparent and
opaque substrates to enable their applications in high perfor-
mance devices.
2,14–26
For example, polycrystalline SnO
2
nano-
tube arrays can be prepared on opaque substrates such as Si
wafer, stainless steel and Cu foils, using preformed ZnO nano-
rod arrays as sacricial templates.
17,22
Similarly, template-free
techniques have also been explored by the wet chemical
synthesis of SnO
2
nanowall arrays
18,21
and electrospinning of
SnO
2
nanowires,
16
both on transparent FTO substrates. Despite
some success, the general fabrication of well-dened SnO
2
nanostructures on arbitrary substrates remains a great chal-
lenge. The intimate interfacial contact is oen necessary for
robust processing and more importantly, in allowing efficient
interfacial carrier charge transport from the active layer to the
conductive support substrate.
Among the criteria for solar harvesting applications, the
SnO
2
substrate ought to maintain transparency, be an efficient
acceptor material, possess a high surface area and extended
absorbance. With an intrinsic bandgap of 3.6 eV (equivalent to
an absorption threshold of 345 nm), pristine SnO
2
can only be
activated by a small fraction of the UV component in the solar
spectrum. As shown by us and others, narrowing of the SnO
2
bandgap can be achieved through cationic doping,
27,28
whereas
in the case of Sn
2+
doping, the accompanying oxygen vacancies
can result in the shiing of the Fermi energy level.
29
Interest-
ingly, the Sn
2+
-doped SnO
2
shows enhanced interfacial charge
transfer and overall NO
2
gas sensing when formulated as paste
and deposited onto an interdigitated alumina substrate.
29,30
In this paper, we showcase the direct growth of Sn
2+
-doped
SnO
2
nanostructures on FTO during the hydrothermal
a
Center of Nanomaterials for Renewable Energy (CNRE), State Key Lab of Electrical
Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong
University, Xi'an, China
b
Department of Physics and Materials Science & Centre for Functional Photonics (CFP),
City University of Hong Kong, Kowloon, Hong Kong S.A.R., China. E-mail: andrey.
rogach@cityu.edu.hk; Fax: +852 3442-0538
c
Clean Energy and Nanotechnology (CLEAN) Laboratory, School of Energy and
Environment, City University of Hong Kong, Kowloon, Hong Kong S.A.R., China
d
Department of Applied Chemistry, Anhui Agricultural University, Hefei, China
† Electronic supplementary information (ESI) available. See DOI:
10.1039/c4nr00672k
Cite this: Nanoscale, 2014, 6, 6084
Received 6th February 2014
Accepted 22nd March 2014
DOI: 10.1039/c4nr00672k
www.rsc.org/nanoscale
6084 | Nanoscale, 2014, 6, 6084–6091 This journal is © The Royal Society of Chemistry 2014
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