This content has been downloaded from IOPscience. Please scroll down to see the full text. Download details: IP Address: 147.46.61.76 This content was downloaded on 05/08/2014 at 01:24 Please note that terms and conditions apply. Concept of rewritable organic ferroelectric random access memory in two lateral transistors- in-one cell architecture View the table of contents for this issue, or go to the journal homepage for more 2014 Semicond. Sci. Technol. 29 025004 (http://iopscience.iop.org/0268-1242/29/2/025004) Home Search Collections Journals About Contact us My IOPscience