XUV Metrology: Surface Analysis with Extreme Ultraviolet Radiation M. Banyay 1 , L. Juschkin 1 , T. Bücker, P. Loosen RWTH-TOS, Steinbachstraße 15, D-52074 Aachen, Germany A. Bayer 1 , F. Barkusky, S. Döring, C. Peth, and K. Mann Laser-Laboratorium Goettingen e.V., Hans-Adolf-Krebs-Weg 1, D-37077 Goettingen, Germany H. Blaschke 1 , I. Balasa 1 , D. Ristau Laser-Zentrum Hannover e.V., Hollerithallee 8, D-30419 Hannover, Germany ABSTRACT The utilization of nanostructured materials for modern applications gained more and more importance during the last few years. As examples super-fluorescent quantum dots, the use of carbon nano tubes (CNTs) in microelectronics, electrospun fibers in filter membranes, thin film coatings for solar cells, mirrors or LEDs, semiconductor electronics, and functionalized surfaces may be named to address only a few topics. To optimize the systems and enable the full range of capabilities of nanostructures a thorough characterization of the surface-near topography (e.g. roughness, thickness, lateral dimension) as well as of the chemical composition is essential. As a versatile tool for spatial and chemical characterization XUV reflectometry, scatterometry and diffractometry is proposed. Three different experimental setups have been realized evaluating spectral resolved reflectance under constant incidence angle, angular resolved reflectance at a constant wavelength, or a combined approach using laboratory scaled XUV sources to gain insight into chemical composition, film thickness and surface/interface roughness. Experiments on near-edge X-ray absorption fine structure spectroscopy (NEXAFS) at the carbon K-edge have been performed. The investigated systems range from synthetic polymers (PMMA, PI) over organic substances (humic acids) to biological matter (lipids), delivering unique spectra for each compound. Thus NEXAFS spectroscopy using a table-top XUV source could be established as a highly surface sensitive fingerprint method for chemical analysis. Future extended experiments will investigate the silicon L-edge where e.g. silicon oxide interlayers below high-k or other nano-layered material on Si- substrates depict a technological important group of composite systems. Keywords: EUV/XUV, Lithography, 13.5nm, Water Window, Material Analysis, NEXAFS, Carbon K-Edge, Silicon L- Edge, Surface Analysis, Thin films, Interface Roughness, Soft X-Rays 1. INTRODUCTION Methods to investigate thin film systems or surfaces utilizing electromagnetic radiation can be traced back many decades. Some methods are even more than a hundred years old, such as ellipsometry or reflectometry [1] . As light sources evolved over time these techniques became two of the most common characterization tools for industrial use. Also with the invention of the laser in the 60s even more metrology methods became available [2] and known techniques as e.g. ellipsometry could be improved. As the downsizing and complexity of electronic devices continues a combination of characterization techniques rather than one ultimate tool needs to be deployed to gain insight into the physical and chemical composition of material surfaces. Thus it is of great advantage to apply a non-destructive technique that is capable of gathering as much information as possible at once. 1 Corresponding Authors: matus.banyay@ilt.fraunhofer.de , larissa.juschkin@ilt.fraunhofer.de , armin.bayer@llg-ev.de , i.balasa@lzh.de , h.blaschke@lzh.de Damage to VUV, EUV, and X-Ray Optics II, edited by Libor Juha, Saša Bajt, Ryszard Sobierajski Proc. of SPIE Vol. 7361, 736113 · © 2009 SPIE · CCC code: 0277-786X/09/$18 · doi: 10.1117/12.833648 Proc. of SPIE Vol. 7361 736113-1