Dependence of intrinsic stress in hydrogenated amorphous silicon on excitation frequency in a plasma‐enhanced chemical vapor deposition process Joydeep Dutta, Ulrich Kroll, Patrick Chabloz, Arvind Shah, A. A. Howling, J.‐L. Dorier, and Ch. Hollenstein Citation: Journal of Applied Physics 72, 3220 (1992); doi: 10.1063/1.351440 View online: http://dx.doi.org/10.1063/1.351440 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/72/7?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Hydrogenation-assisted nanocrystallization of amorphous silicon by radio-frequency plasma-enhanced chemical vapor deposition J. Appl. Phys. 100, 104320 (2006); 10.1063/1.2390629 Features of hydrogenated amorphous silicon films developed under an unexplored region of parameter space of radio-frequency plasma-enhanced chemical vapor deposition Appl. Phys. Lett. 76, 2340 (2000); 10.1063/1.126339 Optimization of plasma-enhanced chemical vapor deposition of hydrogenated amorphous silicon J. Appl. Phys. 83, 8002 (1998); 10.1063/1.367892 Properties of hydrogenated amorphous silicon films prepared by low‐frequency (50 Hz) plasma‐enhanced chemical‐vapor deposition J. Appl. Phys. 72, 234 (1992); 10.1063/1.352165 Intrinsic stress and mechanical properties of hydrogenated silicon carbide produced by plasma‐enhanced chemical vapor deposition J. Vac. Sci. Technol. A 9, 2459 (1991); 10.1116/1.577256 [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.237.29.138 On: Wed, 19 Aug 2015 07:26:45