2015 International Confer IGBT and MOSFE electronics inverter Chitra Natesan* Anitha Dev *Research Scholar,Anna University,Asso Engineer 1 PG scholar,SKP Eng 1a anit562 Abstract—The Role of DG in smart grid becomes in the present energy sector scenario. Either convertor or AC rotating machine will act as an to connect DG with main grid. Higher degree sound technically feasible option will be provided interfaced DG is utilized. Among the various switching devices, higher voltage, low-switc insulated gate bipolar transistor (IGBT) inver voltage, high- switching frequency metal oxide sem effect transistor (MOSFET) inverter have gained in the research forum. Hence this paper mai average approach of converter interfaced DG with as switching devices with 180/120 degree supplyin serious RLC load. Voltage, current, real power, re total harmonic distortions are some of the imp parameters taken for study. Simulations are c MATLAB/Simulink platform. Keywords—Microgrid; Distributed Generation; Thr IGBT ; MOSFET. I. INTRODUCTION The ever increasing power requirement in t commercial sector, along with the need of reliab is approaching the power systems towards Generation (DG) [1]. A microgrid is a uniq which consists of multiple DGs and cluster working is unrelated with the main grid [2]. T of microgrid enhances the power quality, transmission line costs, reduces the green hous and efficiently utilizes the renewable energy Power electronic converters are required to conn the utility grid [4] [5]. Basically there are tw inverter based DG (PV, Fuel cell) and non inv (Synchronous Generator). Some of the DG inverter interface to generate power at the gr practical layout of microgrid structure consi represented in the Fig.1. as belows: rence on Circuit, Power and Computing Technologies [IC ET: A comparative study r topology in distributed vendiran 1a , Swathi Chozhavendhan 1b , Thaniga.D 1c , R ociate Proffesor, Department of Electrical &Electron ring College, India, psk_siva@hotmail.com gineering College,India , SKP Engineering College,I 21@gmail.com 1b swathi.sasi26@gmail.com s a significant one power electronic interfacing media of flexibility and d when converter power electronic ching frequency rter and a lower miconductor field massive attention inly observes the h IGBT/MOSFET ng resistive(R) and eactive power and ortant significant carried out with ree phase inverter; N the industrial and ble power supply the Distributed que form of grid of loads, whose The establishment , decreases the se gas emissions y resources [3]. nect the DER and wo types of DG, verter based DG sources rely on rid frequency. A idered in [6] is Fig. 1 An example o Fundamentally, microgrid can b or autonomous mode. In grid tied m supply and demand by buying/sellin [7]. In autonomous mode, the micro grid and it ensures the reliable po [8]. Generally three phase inverter frequency semiconductor switches s are used for power transfer betwee controlling the phase angle (δ) an voltage. The pulse generator genera to drive the semiconductor swi operation conditions, the inverter which should be kept synchroniz power system. With the increasing structure o there are certain scientific challen issues, reliable power supply, gene CCPCT y of power generation Revathi.R 1d nics Engineering, S.K.P ndia of microgrid be operating either in grid tied mode, microgrid balances the ng power from the utility grid ogrid detaches from the utility wer supply to the customers r employing low power high such as IGBT, MOSFET, etc. en the DC and AC source by nd the magnitude of output ates digital pulses which help itches. Under steady state produces the output voltage zed with the voltage of the of inverter based microgrid, nges such as power quality eration and demand balance, 978-1-4799-7074-2/15/$31.00 ©2015 IEEE