Microelectronic Engineering 56 (2001) 93–98 www.elsevier.nl / locate / mee Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors a a a a a A.S. Segal , A.O. Galyukov , A.V. Kondratyev , A.P. Sid’ko , S.Yu. Karpov , b, c c * Yu.N. Makarov ,W. Siebert , P. Storck a Soft Impact Ltd., P .O. Box 33, 194156 St. Petersburg, Russia b University of Erlangen-Nurnberg,4 Cauerstrasse, 91058 Erlangen, Germany c Wacker Siltronic AG, P .O. Box 1140, 84479 Burghausen, Germany Abstract A detailed modeling of CVD of silicon epilayers from trichlorosilane (TCS) on the 200- and 300-mm wafers in the Centura reactors is carried out using a quasi-thermodynamic model of surface kinetics. The flow patterns, the temperature and species distributions in the reactors, and the growth rate distributions over the wafers are studied. The growth rate distribution over the 300-mm wafer is shown to be less uniform and symmetric compared to that over the 200-mm wafer under typical growth conditions. An essential smoothing effect of the susceptor rotation and of a higher flow rate is revealed and found to be much stronger for the 300-mm wafer.  2001 Published by Elsevier Science B.V. Keywords: CVD; Epitaxy; Silicon; Trichlorosilane; 200 / 300 mm wafers 1. Introduction The current trends in the semiconductor industry are related to the transition to thinner silicon layers (the sub-quarter-micron level) at a larger substrate diameter (the 200 / 300-mm wafer conversion). Development of the new industrial techniques requires durable and expensive experimen- tal studies including a search for the optimal growth conditions. Numerical simulation allows making some predictions concerning the process features and thereby facilitates the experimental in- vestigations. In this paper, we apply a previously developed and verified quasi-thermodynamic approach to the description of surface kinetics [1] to detailed simulation of CVD of silicon epilayers from TCS on the 200- and 300-mm wafers in the Centura reactors. The model is implemented numerically using the commercial computational code CFD-ACEE and then is used for careful study and comparison of the flow patterns, temperature and species distributions, and growth characteristics for both the wafers. *Corresponding author. Tel.: 149-9131-76-1248; fax: 149-9131-76-1275. E-mail address: yuri.makarov@pp.kolumbus.fi (Y.N. Makarov). 0167-9317 / 01 / $ – see front matter  2001 Published by Elsevier Science B.V. PII: S0167-9317(00)00509-8