Journal of Crystal Growth 250 (2003) 203–208 Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations V.V. Kalaev a , D.P. Lukanin a , V.A. Zabelin a , Yu.N. Makarov b, *, J. Virbulis c , E. Dornberger c , W. von Ammon c a Soft-Impact Ltd., St.Petersburg, Russia b STR, Inc., P.O. Box 70604, Richmond, VA 23255-0604, USA c Wacker Siltronic AG, Burghausen, Germany Abstract We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during 300 mm CZ Si crystal growth. The 3D analysis includes the calculation of the crystallization front geometry, validated by comparing to experimental data and results obtained with a conventional 2D model. At the second step, an analysis of defect incorporation and evolution in the crystal has been performed within a 2D model. r 2002 Elsevier Science B.V. All rights reserved. PACS: 81.10.Fq; 81.10.Aj; 47.27.Eq; 47.27.Te; 83.20.Jp Keywords: A1. Computer simulation; A1. Heat transfer; A1. Turbulent convection; A2. Czochralski method; B1. Silicon 1. Introduction Over the last years, increasing requirements of industry to silicon wafer quality has significantly stimulated the development of the Czochralski growth technology, using the experimental [1,2] and theoretical approaches [3–10]. Numerical simulation has become a powerful tool supporting technology evolution, however, the quality of computations should be in the line with ever increasing engineering requirements. The predic- tion of electrical properties of silicon is closely related to the calculation of characteristics of point defects in growing crystal, that depend on thermal regime during crystal pulling and the concentra- tions of impurities. Temperature distribution in the crystal is a result of heat interaction in the hot zone of a CZ system; but the geometry of the melt/ crystal interface is unknown a priori and is to be found during a calculation. A computational model which could precisely predict the interface shape is still under discussion [3,4,10] with a general conclusion that up-to-date 2D models could only be used as a first approximation. In the paper [10], we presented a 3D unsteady model overcoming some limitations of conventional 2D calculations with reference to 100mm crystal growth. In the present contribution, the model is applied to the calculation of the interface shape in *Corresponding author. Tel.: +1-804-304-8092; fax: +1- 804-217-7076. E-mail address: yuri.makarov@pp.kolumbus.fi (Y.N. Ma- karov). 0022-0248/03/$-see front matter r 2002 Elsevier Science B.V. All rights reserved. doi:10.1016/S0022-0248(02)02240-6