32 The 4th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), Nov. 22-26, 2004,Kona, Hawaii, USA Modeling of Czochralski growth of Si crystals in industrial systems with and without magnetic fields V. Kalaev 1 , K. Khodosevitch 2 , Yu. Makarov 3* 1 Semiconductor Technology Research GmbH, P.O. Box 1207, Erlangen, D-91002, Germany 2 Soft-Impact, Ltd., P.O. Box 83, St. Petersburg, 194156, Russia 3 Semiconductor Technology Research, Inc., P.O. Box 70604, Richmond, VA 23255-0604, USA e-mail: vladimir.kalaev@strgmbh.de, khodosevitch@softimpact.ru, yuri.makarov@semitech.us Abstract On the basis of 3D unsteady modeling proven to be a predictive tool for the calculation of the crystallization front geometry [1-3], we have considered the effect of magnetic field on the flow and heat transport in the melt. The results of 3D unsteady computations are compared to experimental temperature measurements in the melt during 100 mm CZ Si growth, published in [4]. General advantages and limitations of steady 2D and unsteady 3D modeling approaches are discussed in the paper. Introduction Lately, a large number of researches have attended to the numerical simulation of Czochralski (CZ) silicon crystal growth [1-7]. As the geometry of a CZ Si growth setup can be approximated by an axisymmetric representation, the problem seems to be solvable within a 2D approach, but certain physical phenomena such as turbulence in the melt are generally not axisymmetric. An adequate simulation of melt convection provides a fine prediction of the crystallization front shape, V/G criterion (G is the axial temperature gradient, V is the pulling rate), and impurity transport in the melt. The 2D computational approaches using k-e turbulence models can give the temperature distributions, which only qualitatively correspond to experimental data [4]. However, the 2D approach cannot account for specific 3D unsteady features, which are very important in the large-diameter crystal growth. Additionally to this, some phenomena as horizontal magnetic field can only be described by a fully 3D simulation. An adequate 3D Direct Numerical Simulation of the large CZ Si crystal growth is still exceeding reasonable computer resources. The advanced 3D model we on the basic of Large Eddy Simulation technique have presented in [1-3] simulates heat and mass transport in a conjugated way for the crystallization zone including the melt, crystal, and crucibles. This approach demonstrated a well predictability of the heat transfer and crystallization front Fig.1. 3D computational grid containing crucible, crystal, melt, and inert gas blocks