Journal of Crystal Growth 223 (2001) 447–449 Priority communication Atomic layer epitaxy of ZnTe by isothermal closed space sublimation E.M. Larramendi a , E. Puro´ n a , L.C. Herna´ndez a , M. Sa´nchez a , S. De Roux a , O. de Melo a, *, G. Romero-Paredes b , R. Pen˜a-Sierra b , M. Tamura c a Faculty of Physics-IMRE, University of Havana, Colina Universitaria, 10400 La Habana, Cuba b Department of Electrical Engineering, SEES, CINVESTAV-IPN, Ave. IPN 2508, 07000 Mexico D.F., Mexico c Department of Physics, CINVESTAV-IPN, Ave. IPN 2508, 07000 Mexico D.F., Mexico Received 27 October 2000; accepted 2 January 2001 Communicated by L.F. Schneemeyer Abstract Atomic layer epitaxy growth of ZnTe films is achieved using a novel isothermal closed-space sublimation system with elemental sources. X-rays, electron diffraction and optical measurements indicated the epitaxial quality of the films and confirmed a self-regulated atomic layer epitaxy regime. As the procedure is near equilibrium, the self-regulation mechanism is different from that occurring in other techniques like molecular beam epitaxy. In the present case, the difference in vapor pressures between the elemental source and the growing surface is the driving force for the growth; this difference being zero once the surface is completely covered. # 2001 Elsevier Science B.V. All rights reserved. PACS: 81.05.Dz; 81.15.Hi; 81.10.Aj; 68.55.jk Keywords: A3. Atomic layer epitaxy; B2. Semiconducting II–VI materials Zinc telluride and its ternary alloys are particu- larly interesting due to their potential applications for devices in the green region of the electro- magnetic spectrum. ZnTe/GaAs heterostructures have been grown by molecular beam epitaxy (MBE) [1], metalorganic chemical vapor deposi- tion (MOCVD) [2], hot-wall epitaxy (HWE) [3] and temperature-gradient vapor transport deposi- tion (TGVTD) [4]. Atomic layer epitaxy (ALE) [5], has also been used. At adequate temperatures, the growth is self-regulated at one or fewer mono- layers per cycle. This growth regime allows good control and reproducibility of films thickness, and probably enhances the two-dimensional growth mode. Up to now, ALE has been obtained by using non-equilibrium techniques like MBE and MOCVD. This paper presents results on ZnTe ALE thin films grown on GaAs (1 0 0) substrates by a simple and low-cost technique. The regulating mechanism is different from that in non-equili- brium techniques and the system is notably cheap. The growth procedure is based on an isothermal closed space sublimation (ICSS) configuration. However, unlike the traditional precursors used in this technique; we use elemental Zn and Te *Corresponding author. E-mail address: omelo@ff.oc.uh.cu (O. de Melo). 0022-0248/01/$-see front matter # 2001 Elsevier Science B.V. All rights reserved. PII:S0022-0248(01)00648-0