Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation. P. Christol* a , C. Cervera a , R. Chaghi a , H. Aït-kaci a , J.B. Rodriguez a , L. Konczewicz b , S. Contreras b , K. Jaworowicz c , I. Ribet-Mohamed c . a Institut d’Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2 Place Eugène Bataillon, 34095 Montpellier Cedex 5, France b Groupe d'Etude des Semiconducteurs, UMR-CNRS 5650, Université Montpellier 2 Place Eugène Bataillon, 34095 Montpellier Cedex 5, France c ONERA, Chemin de la Hunière, 91761 Palaiseau - France ABSTRACT Electrical properties of non-intentionally doped (nid) InAs/GaSb Superlattice (SL) structures and p-nid-n detectors grown by Molecular Beam Epitaxy on GaSb substrate are reported. The SL structures were made of 600 periods of 8 InAs monolayers (MLs) and 8 GaSb MLs, for a total thickness of 3μm. This structure exhibited a cutoff wavelength in the midwave infrared (MWIR) domain, near 4.7µm at 80K. Electrical transport measurements, based on resistivity and Hall Effect measurements, were performed on SL structure after removing the conducting GaSb substrate with an appropriate technological process. Carrier concentrations and mobilities carried out as a function of temperature (77- 300K) for magnetic fields in the 0-1 Tesla range are analyzed. A change in type of conductivity is observed. The nid SL layers is p-type at liquid Nitrogen temperature while is n-type at room temperature. These results are completed with diode characterizations based on current-voltage (I-V) and capacitance-voltage (C-V) measurements performed on p-nid- n devices with identical InAs/GaSb SL active zone. Keywords: InAs/GaSb Superlattice, Infrared Photodiode, transport measurements, dark current measurements. 1. INTRODUCTION InAs/GaSb superlattice (SL) is now considered as a new material system for the fabrication of high performance infrared (IR) photodetectors for thermal imaging camera 1 . Since the first works of Yang and Bennet 2 on midwave (3-5 µm) infrared (MWIR) InAs/GaSb SL photodiodes, impressive progresses were obtained on SL material 3,4 , device 5-7 and focal plane arrays 8-10 , with in particular non cryogenic operation of MWIR single pixel photodiodes 11-14 . However, to enhance performances and/or temperature operation, improvements of device technology as well as a better knowledge on electrical properties of the SL photodiodes are still necessary. Especially, one needs to have a better understanding of carrier transport in the SL material and dark current behavior in SL photodiode in order to evaluate the ability of such system to reach high temperature operation. In this paper, we report on electrical properties of MWIR non-intentionally doped (nid) InAs/GaSb SL layers and p-nid-n SL detectors grown by molecular beam epitaxy (MBE) on GaSb substrates. The SL structures were made of 600 periods of 8 InAs monolayers (MLs) and 8 GaSb MLs (8/8 SL), for a total thickness of 3μm, and exhibited a 4.7µm cutoff at 80K. Two kinds of electrical measurements were investigated on SL structures. First, in section 2, we describe results of transport measurements, based on resistivity and Hall Effect measurements, performed on nid SL sample after the GaSb substrate has been mechanically and chemically removed. In this case, only the carriers from the SL materials take part in electrical conduction process. _________________ *christol@ies.univ-montp2.fr Invited Paper Quantum Sensing and Nanophotonic Devices VII, edited by Manijeh Razeghi, Rengarajan Sudharsanan, Gail J. Brown, Proc. of SPIE Vol. 7608, 76081U · © 2010 SPIE · CCC code: 0277-786X/10/$18 · doi: 10.1117/12.840853 Proc. of SPIE Vol. 7608 76081U-1