INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS D: APPLIED PHYSICS
J. Phys. D: Appl. Phys. 36 (2003) 1473–1476 PII: S0022-3727(03)52033-2
Semiconductor optical amplifier length
effects on gain dynamics
F Ginovart and J C Simon
Groupement d’Int´ erˆ et Scientifique ‘FOTON’, Laboratoire d’Optronique/UMR CNRS 6082,
ENSSAT–Universit´ e de Rennes1, 6, rue de K´ erampont, 22305 Lannion Cedex, France
Received 6 August 2002, in final form 23 December 2002
Published 18 June 2003
Online at stacks.iop.org/JPhysD/36/1473
Abstract
We study theoretically semiconductor optical amplifier (SOA) length effects
on gain dynamics when a short saturating pulse (pump) is either co- or
counter-propagative with the probe. More specifically, we focus our
attention on SOA recovery dynamics and gain overshoot. Analysis is also
given when the input probe power and input pump energy are increased for
different SOA lengths.
1. Introduction and model
During the last decade, gain saturation in semiconductor
optical amplifiers (SOAs) has been thoroughly used for
applications in all-optical signal processing, such as
wavelength conversion or gating components in optical
regeneration devices [1, 3]. Concerning gain dynamics studies
including ASE, pump and CW probe propagation, few models
have been proposed [4–7]. Here, we use a direct temporal
analysis of a wavelength converter, based on a previous work
[8]. Our model [9] includes propagation of pump, probe and
forward and backward amplified spontaneous emission. The
band model is the four-band Kane model and the calculations
use the Ga
0.40
In
0.60
As
0.85
P
0.15
parameters from Pearsall [10]
for the undoped core. The amplifier structure is a buried ridge
type waveguide. The substrate is a n-type InP substrate, with
the core stripe lying on it. The core is surrounded by an InP
cladding material, grown up to a thickness of 2 µm above the
core top interface. The cladding material is undoped except for
a narrow stripe region (Zn-doped, p-type) located just above the
core for carrier conduction. Usual ohmic contact and Ti–Pt–Au
layers complete the structure. We did not consider intraband
relaxation effects which can be not relevant, for instance for
experiments using long pulse durations in bulk SOA. Here, we
assume that SOA facets reflectivity is negligible and that all
the injected current contributes completely to the population
inversion in the active zone. We also assume that transverse
effects are negligible since carrier scattering length is much
longer than waveguide size, and thus carrier density is uniform
in transverse cross-sections. We give in table 1 the constant
modelling parameters which have been used.
Table 1. Parameters used in the model.
SOA length: L = parameter Confinement factor: Ŵ = 0.5
rectangular guide:
0.5 × 0.4 µm
2
Injected current density: Peak gain wavelength value:
I = 0.238 A cm
−1
1.54 µm
Probe wavelength: 1530 nm Auger recombination coefficient:
C = 4 × 10
−29
cm
6
s
−1
Pump wavelength: 1540 nm Spontaneous recombination
Pump pulse duration: 2.1 ps coefficient:
B = 1.2 × 10
−9
cm
3
s
−1
2. Results and discussion
2.1. SOA length effects on gain dynamics
We plot in figures 1–3 the time evolution of the gain dynamics
of three SOA, whose lengths are 630, 1170 and 1710 µm.
In order to compare the effect of device length, bias current
values are adjusted in order to get the same current density.
Also, injected pump pulse energy has been adjusted in order to
obtain the same gain compression (about 10 dB) in all cases.
Injected pump energy values are given in table 2.
Note that figure 1 corresponds to a weak value of the input
probe power, 10
−6
µW, in order to leave undisturbed the SOA
gain. Since it is a small-signal regime, we have plotted only
the co-propagative configuration. Figures 2 and 3 correspond
to a moderately high input probe power, 60 µW, respectively,
in co- and counter-propagative configurations. We can clearly
see on all curves a fast gain compression followed by a gain
recovery which is more or less fast depending on probe power
and device length.
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