Anuário Científico, 2002 1 ELECTRICAL SIMULATION OF A p-i-n IMAGE SENSOR J. Martins; M. Fernandes; M. Vieira Instituto Superior de Engenharia de Lisboa. Publicado em: Vacuum, vol. 64(3-4), pp. 307-313, Elsevier Science LTD, Oxford, IDS Number: 510HH, ISSN: 0042-207X, January, 2002. We have modelled a p-i-n image sensor under local illumination through a two-dimensional non-linear circuit. The sensor is described as an array of photodiodes interconnected through lateral resistors, which model the sheet resistance of the doped layers. Under small-signal analysis a current-controlled resistor proportional to the inverse of the photocurrent models each photodiode. A SPICE based simulator is used as a tool to analyse the sensor output characteristics. Several configurations and contact geometries are analysed for the image transducer. The image responsivity, the spatial resolution and the image distortion are modelled by changing the ratio between the transversal and the lateral resistors or the acquisition points. Results show that the geometry and location of the contacts affect the distortion of the restored image. The conductivity of the doped layers and the light flux illumination influences the image resolution and accuracy. The simulated and experimental results were found in a good agreement. PROPERTIES OF HIGH GROWTH RATE AMORPHOUS SILICON DEPOSITED BY MC-RF-PECVD G. Lavareda a ; CN de Carvalho a ; A. Amaral a,c ; JP Conde d ; M. Vieira e ; V. Chu f a UTL, Centro de Física Molecular, IST, Lisboa, Portugal; b Universidade Nova de Lisboa, Faculdade de Ciências e Tecnologia; c UTL, DF, Lisboa, Portugal; d UTL, DEM, IST, Lisboa, Portugal; e Instituto Superior de Engenharia de Lisboa; f Instituto Engenharia de Sistemas e Computadores, Lisboa, Portugal. Publicado em: Vacuum, vol. 64(3-4), pp. 245-248, Elsevier Science LTD, Oxford, IDS Number: 510HH, ISSN: 0042-207X, January, 2002.