Composition and Microstructure of Cobalt Oxide Thin
Films Obtained from a Novel Cobalt(II) Precursor by
Chemical Vapor Deposition
Davide Barreca and Cristian Massignan
Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Universita ` di Padova,
Via Loredan 4, I-35131 Padova, Italy
Sergio Daolio and Monica Fabrizio
Istituto di Polarografia ed Elettrochimica Preparativa, CNR, Corso Stati Uniti 4,
I-35020 Padova, Italy
Clara Piccirillo
High Vacuum Process, Via Azzoni 3b, I-43100 Parma, Italy
Lidia Armelao and Eugenio Tondello*
Centro di Studio sulla Stabilita ` e Reattivita ` dei Composti di Coordinazione del CNR,
Via Marzolo 1, I-35131 Padova, Italy
Received March 20, 2000. Revised Manuscript Received October 31, 2000
The present work reports the synthesis and the characterization of cobalt oxide thin films
obtained by chemical vapor deposition (CVD) on indium tin oxide (ITO) substrates, using a
cobalt(II) -diketonate as precursor. The complex is characterized by electron impact mass
spectrometry (EI-MS) and thermal analysis in order to investigate its decomposition pattern.
The depositions are carried out in a cold wall reactor in the temperature range 350-500 °C
at different oxygen pressures, to tailor film composition from CoO to Co
3
O
4
. The crystalline
nanostructure is evidenced by X-ray diffraction (XRD), while the surface and in-depth
chemical composition is studied by X-ray photoelectron (XPS) and X-ray excited auger electron
spectroscopy (XE-AES). Atomic force microscopy (AFM) is employed to analyze the surface
morphology of the films and its dependence on the synthesis conditions. Relevant results
concerning the control of composition and microstructure of Co-O thin films are presented
and discussed.
Introduction
Materials based on cobalt oxides have attracted a
great interest in view of their potential applications in
scientific and technological fields.
1-3
Co
3
O
4
, the most
stable phase in the Co-O system, is a mixed valence
compound [Co
II
Co
III
2
O
4
] with a normal spinel structure.
Cobalt oxide-based materials have received attention for
the production of solid-state sensors
4,5
and heteroge-
neous catalysts
6-8
and as intercalation compounds for
energy storage.
9-11
One of their most important applications is the
preparation of electrochromic devices (ECDs)
12
exploit-
ing the reversible changes of their optical properties
under an external electrical stimulus.
13
Co
3
O
4
has been
used as an active material for its color change from
brown to light yellow when Li
+
ions are inserted;
14
the
corresponding electrochromic efficiency is relatively high
(≈25 cm
2
‚C
-1
). (The electrochromic efficiency is defined
as ΔOD(λ)/Q, where Q is the injected charge (C·cm
-2
)
producing the absorbance variation ΔOD for a given λ).
Besides, cobalt monoxide is often used as a counter
electrode because of its anodic coloration proper-
ties.
12,15,16
* Corresponding author: E-mail: tondello@chin.unipd.it. Phone:
+39-0498275220. Fax: +39-0498275161.
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10.1021/cm001041x CCC: $20.00 © 2001 American Chemical Society
Published on Web 01/17/2001