Microelectronic Engineering 67–68 (2003) 196–202 www.elsevier.com / locate / mee Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs / InP * I. Maximov , P. Carlberg, I. Shorubalko, D. Wallin, E-L. Sarwe, M. Beck, M. Graczyk, W. Seifert, H.Q. Xu, L. Montelius, L. Samuelson Division of Solid State Physics and The Nanometer Consortium, Lund University, Box 118, Lund, S-221 00, Sweden Abstract We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs / InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high- mobility InP-based 2DEG material, we used SiO / Si stamps made with electron beam lithography and reactive 2 ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs / InP to define the TBJ-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices.  2003 Elsevier Science B.V. All rights reserved. Keywords: Nanoimprint lithography; Three-terminal ballistic junction; GaInAs / InP PACS: 81.16.Nd; 85.35.-p; 81.65.Cf 1. Introduction Recent advances in nanotechnology have made it possible to fabricate devices with physical dimensions comparable with the electron mean free path at room temperature. Such electron waveguide-based structures have attracted increased attention in the last few years because of their novel properties, including non-linear behavior, and their integration possibility in nanoelectronics. A heterostructurally-defined, sub-100 nm wide GaInAs / InP electron waveguide with quantized conduct- ance was demonstrated in 1997 [1], but recently a novel electrical property of three-terminal ballistic junction (TBJ) devices has been both theoretically predicted [2] and experimentally demonstrated [3,4]. The three-terminal ballistic junction can be modeled as three quantum point contacts (QPC) *Corresponding author. E-mail address: ivan.maximov@ftf.lth.se (I. Maximov). 0167-9317 / 03 / $ – see front matter  2003 Elsevier Science B.V. All rights reserved. doi:10.1016 / S0167-9317(03)00071-6