REVISED VERSION PAPER REFERENCE: K-X.2 CHARACTERIZATION OF POLYCRYSTALLINE SIC LAYERS GROWN BY ECR-PECVD FOR MICRO-ELECTRO- MECHANICAL SYSTEMS C. Ricciardi *1 , E. Bennici 1 , M. Cocuzza 1 , P. Mandracci 1 , D. Bich 2 , V. Guglielmetti 2 , G. Barucca 3 1 INFM and Physics Department of Polytechnic of Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy 2 Olivetti I-JET, Loc. Le Vieux, Arnad (AO), Italy 3 INFM and Material Science Department, University of Ancona, Via Brecce Bianche, 60131, Ancona, Italy * Corresponding author: Tel. +39 011 5647381; Fax. +39 011 5647399; ricciardi@polito.it Physics Department of Polytechnic of Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy ________________________________________________________________________________ Abstract Large area (up to 4”) polycrystalline 3C-SiC films have been deposited by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) technique. Crystalline and non crystalline substrates such as (100) Si wafers, thermally oxidized Si wafers and Al2O3 ceramic sheets have been used, maintaining the same deposition conditions. The structural and morphological properties of the films were analyzed by means of Transmission Electron Microscopy (TEM) and X-Ray Diffractometry (XRD), while surface morphology was characterized by Atomic Force Microscopy (AFM). Preliminary results on technological processes for the realization of polycrystalline SiC based micro-electro-mechanical systems (MEMS) are reported. Keywords: polycrystalline SiC; ECR-CVD; Transmission Electron Microscopy; MEMS ________________________________________________________________________________ 1. Introduction Silicon Carbide has attracted the attention of the scientific community expecially because of its physical properties, such as high breakdown field, high saturated drift velocity and high thermal conductivity. Those characteristics make it an optimum material for the realization of power electronic and high frequency devices [1,2]. In recent years, crystalline and polycrystalline SiC, due