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Hui Jin, Almantas Pivrikas, Kwan H. Lee, Muhsen Aljada, Mike Hambsch,
Paul L. Burn,* and Paul Meredith*
Factors Influencing the Efficiency of Current Collection
in Large Area, Monolithic Organic Solar Cells
Dr. H. Jin, Dr. A. Pivrikas, Dr. K. H. Lee, Dr. M. Aljada,
M. Hambsch, Prof. P. L. Burn, Prof. P. Meredith
Centre for Organic Photonics & Electronics
University of Queensland
Brisbane, QLD 4072, Australia
E-mail: p.burn2@uq.edu.au;
meredith@physics.uq.edu.au
DOI: 10.1002/aenm.201200254
Doped metal oxides have played a pivotal role in modern elec-
tronics and optoelectronics–particularly as transparent, con-
ducting electrodes (TCEs). In this regard, indium tin oxide (ITO)
is commonly employed owing to its high optical transparency
in the visible and acceptable sheet resistance (10–15 ohm sq
-1
).
Organic solar cells (OSCs) in particular have relied upon ITO as
the TCE of choice. This reliance has unfortunately hindered the
scaling of OSCs to sub-module and module levels for multiple
reasons: firstly cost, but it also appears that the sheet resist-
ance of ITO prohibits effective current collection over pathways
(the shortest linear distance to an electrode) of more than a
few cms.
[1–4]
There have been previous attempts to understand
these performance-limiting phenomena in small-scale ( < 1cm
2
)
devices. For example, Pandey et al.
[5]
simulated the power
losses by using a one-dimensional current model, which they
attributed to series resistance dissipation. Manor et al.
[6]
using
a diode-model approach based upon standard Shockely theory
reported the underlying physical mechanisms that reduce cur-
rent and fill factor, including the voltage dependence of photo-
current and the influence of dark current. However, to date, no
systematic understanding of power losses has been presented
for large devices at the sub-module scale where cell architec-
ture, electrode geometry and current collection pathways are
quite different to laboratory-scale cells. Although efficien-
cies of > 8.3% or even > 10% have recently been achieved in
small cells, these competitive performance figures are yet to be
translated to large active areas–a fact in part due to this lack of
knowledge.
[7,8]
For many doped metal oxides (including ITO) an
inherent trade-off exists between doping (to achieve low resist-
ance) and transparency.
[9,10]
This of course leads to an obvious
problem for solar cells: the number of photons transmitted into
the active junction through the TCE must be optimised, and
yet in a device dominated by series resistance the maximum
photocurrent needs to be extracted. Although several groups
have studied these effects in combination with electrode geom-
etry for serially connected strip architectures, there has been
relatively little focus on monolithic devices with collection path-
ways greater than a few cms.
[11–13]
Krebs et al. reported ITO-free
monolithic solar cells with an area > 100 cm
2
by using silver
grids as the transparent front electrode, and a large geometric
fill factor of 74% was achieved.
[14,15]
From a manufacturing
perspective, the monolithic architecture is undoubtedly prefer-
rable since it can lead to good utilisation of the substrate and
simplified processing. Therefore, irrespective of whether ITO
becomes the dominant commercial TCE in organic solar cells,
we must develop a more in depth understanding of how photo-
current and photovoltage extraction can be optimised over large
active areas at the sub-module and module levels.
In this work, the device physics of 5 cm × 5 cm mono-
lithic organic solar cells based on a blend of the model donor
polymer poly(3- n-hexylthiophene) (P3HT) and the electron
acceptor [6,6]-phenyl-C
61
-butyric acid methyl ester (PC
60
BM) is
investigated with particular emphasis on collection efficiency as
a function of electrode geometry. By partially illuminating the
cells at different positions via a narrow illumination beam, pho-
tovoltaic parameters have been mapped. We show clearly that
the short circuit current distribution is determined as expected
by the effective series resistance (dominated by the ITO sheet
resistance) while the open-circuit voltage is almost independent
of the illumination position. Certain contact geometries are very
susceptible to these effects. We confirm these findings using
extraction current modeling and also use aperture illumination
to determine a critical device area, which when exceeded causes
the ITO sheet resistance to become debilitating.
A series of large area monolithic (i.e., not serially connected
strips) organic solar cells were prepared on ITO-coated glass sub-
strates with the structure of ITO/PEDOT:PSS/P3HT:PC
60
BM/
Al. Three electrode geometries were implemented to achieve
centrally symmetric and diagonally symmetric collection archi-
tectures with device active areas of 5 cm × 5 cm. Schematic
illustrations of the devices with the three electrode geometries
( G
O
, G
M
and G
L
) are shown in Figure 1a –c, respectively. The
top light grey parts represent metal aluminum (Al) cathodes,
and the side Al bars are connected with the bottom ITO as
anode contacts. The round and square symbols represent the
contact positions for positive and negative probes, respectively.
As such, all the round symbol positions were at equal positive
potential and all the square symbol positions at equal negative
potential. The contact area of the probe head was approximately
1.0 mm
2
. The collection circuit around the monolithic device
does compromise the geometric fill factor, but in practise it
would be integrated into the module architecture as is the case
with inorganic solar cells.
Due to the relatively high sheet resistance of ITO, it has been
reported that power loss from the ITO becomes the only area-
scaling parameter.
[1]
Since the resistance of Al is negligible, the
Adv. Energy Mater. 2012, 2, 1338–1342