ELSEVIER
PhysicaC276 (1997) 270-276
PHYSICA @
Hg-1212 and Hg-1223 single crystals" synthesis and
characterisation
R. Gatt a,*, E. Olsson a A. Morawski b, T. Lada b A. Paszewin b, I. Bryntse c,
A.M. Grishin d, Yu. Eeltsev e, p. Berastegui f, L.-G. Johansson f
a Department t~fPhysics. Chalmers Unicersity of Technology, S-41296 Gothenburg, Sweden
b High Pressure Research Center Unipress, Polish Academy of Sciences, Warsaw, Poland
c Department of Inorganic Chemistry,'Arrhenius Laboratory., Stockholm University, S-10691 Stockholm, Sweden
d Department of Condensed Matter Physics, Royal Institute of Technology, S-10044 Stockholm, Sweden
e Department of Solid State Physics, Royal Institute of Technology, S-10044 Stockholm, Sweden
J Department of lnorganic Chemistry, Chalmers Universi~' t~f Technology, S-41296 Gothenburg, Sweden
Received 25 July 1996; revised manuscriptreceived l February 1997
Abstract
Single crystals of HgBa2CaCu206+ 8 (Hg-1212) and HgBa2Ca2Cu3Os+ ~ (Hg-1223) were grown from the melt at an
argon pressure of 10 kbar. Electron microscopy, as well as single crystal X-ray diffraction studies show that the crystals are
well ordered, The EDS analysis indicates the presence of a minor amount of other cations replacing Hg, Ba and Ca in the
structure. Refined fractional coordinates and thermal parameters are given for a crystal of Hg-1223 type. Magnetic and
resistive measurements show a T~ of 133 K for the Hg-1223 phase.
Keywords: Hg cuprates; Single crystals; Synthesis; High pressure; Liquid phase epitaxy; Scanning electron microscopy; Transmission
electron microscopy
I. Introduction
The Hg cuprates [1] exhibit the highest critical
temperature (Tc) for a superconducting transition
obtained so far (135 K at ambient pressure for
HgBa2Ca2Cu 308 ÷ ~ (Hg- 1223)). They also present a
remarkable increase of T~ under high pressure. These
compounds attracted much interest because of possi-
ble applications as well as from the point of view of
* Corresponding author.
fundamental science. The possibility to produce elec-
tronic devices based on high temperature supercon-
ductors (HTS) and operating at temperatures higher
than 100 K is appealing. This is not only because of
the possibility of using unconventional cooling meth-
ods like operating in space and solid state coolers,
but also because the performance of these devices at
77 K is expected to be greatly improved in compari-
son to devices based on conventional HTS com-
pounds like YBa2Cu3OT_8, as they will operate
well below their critical temperature. In that respect
a minimal value of 120 K for T~ has been suggested
[2]. Following that line we have grown thin films of
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