IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 41, NO. 1, JANUARY 2006 287
3 Gb/s AC Coupled Chip-to-Chip Communication
Using a Low Swing Pulse Receiver
Lei Luo, John M. Wilson, Stephen E. Mick, Jian Xu, Liang Zhang, and Paul D. Franzon, Fellow, IEEE
Abstract—A 120-mV low swing pulse receiver is presented
for AC coupled interconnect (ACCI). Using this receiver, 3 Gb/s
chip-to-chip communication is demonstrated through a wire-
bonded ACCI channel with 150-fF coupling capacitors, across
15-cm FR4 microstrip lines. A test chip was fabricated in TSMC
0.18- m CMOS technology and the driver and pulse receiver
dissipate 15-mW power per I/O at 3 Gb/s, with a bit error rate
less than 10 . First-time demonstration of a flip-chip ACCI is
also presented, with both the AC and DC connections successfully
integrated between the flipped chip and the multichip module
(MCM) substrate by using the buried bump technology. For the
flip-chip ACCI, 2.5 Gb/s/channel communication is demonstrated
across 5.6 cm of transmission line on a MCM substrate.
Index Terms—AC coupled interconnect, bandlimited communi-
cations, buried bump technology, capacitive coupling, multichip
modules, pulse receiver, pulse signaling.
I. INTRODUCTION
T
ECHNOLOGY scaling demands high-density and low-
power off-chip input/output (I/O). The ITRS predicts the
need for a 110- m pad pitch for cost-performance area array
flip-chip applications in 2008 [1], a pitch that is difficult to
achieve with available technologies. Recently, several technolo-
gies have been reported using capacitive coupling to replace
physical pin/solder bumps for high-density, low-power chip-to-
chip communications [3]–[8]. This is based on the fact that non-
contacting AC connections can be built more densely than DC
connections and the AC component actually carries all the infor-
mation of a digital signal. Instead of using traditional bonding
wires as the DC connections at edge of chips, in AC coupled in-
terconnect (ACCI), the buried solder bump technology provides
a solution for both high-density signal I/O and power/ground pin
distribution [4].
In contrast to most of the recent results focusing on stacked
ICs [5]–[7], the work presented here, ACCI, is optimized for
lossy, board-level, capacitively-coupled interconnect. This work
enables long distance communication among multiple chips,
while retaining the high-density and low-power properties of
capacitive coupling. ACCI can not only satisfy the increasing
demand for high-density signal I/Os, but it also saves precious
Manuscript received May 15, 2005; revised August 15, 2005. This work was
supported in part by the AFRL under Contract F29601-03-3-0135, in part by
SRC under Task 1094, and in part by the National Science Foundation under
Grant CCR-0219567.
The authors are with the Department of Electrical and Computer Engi-
neering, North Carolina State University, Raleigh, NC 27695 USA (e-mail:
lluo3@ncsu.edu; jmwilson@ncsu.edu; semick@ncsu.edu; jxu6@ncsu.edu;
lzhang3@ncsu.edu; paulf@ncsu.edu).
Digital Object Identifier 10.1109/JSSC.2005.859881
Fig. 1. Comparison with previous CMOS high-speed pulse receivers. (All
scaled to 0.18 m. To be on the same base line, single-ended is used for
single-ended pulse receivers in [4]–[7]; differential is used for differential
pulse receivers in [2] and in this paper).
chip area for more / pins to improve power system signal
integrity.
In this paper, the unique band-pass channel response and
equalization scheme of ACCI channel are discussed and com-
pared with the traditional low-pass response of a transmission
line (T-line) channel. Coupling capacitor and T-line design
rules and design margins are discussed. A voltage-mode driver
is used for the ACCI channel and saves more than 70% power,
when compared to a traditional current-mode driver with
conductive signaling. Interconnect power dissipation is mini-
mized by using low swing-pulse signaling. For receiver design,
previous CMOS single-ended [4], [5], [7] and differential [2]
pulse receivers are reported with more than 200-mV input
swing when scaled to 0.18- m technology, as shown in Fig. 1.
In this paper, a 3-Gb/s differential pulse receiver requiring only
120 mV input swing is proposed. The three times reduction
of input swing made possible by this receiver enables ACCI
with a five times smaller coupling capacitance which translates
to a five times higher I/O density, and a signal across longer
T-lines than the previous work [4].
Chip-to-chip communication at 3 Gb/s is demonstrated
through two 150-fF coupling capacitors across a 15-cm FR4
microstrip line. On the test chip, the pulse receiver converts
pulses into nonreturn-to-zero (NRZ) data without a clock
signal; then a semidigital dual DLL successfully recovers the
receiver-side clock phase from the recovered NRZ data. An
on-chip BER tester indicates errors less than 10 through one
ACCI channel for rates up to 3 Gb/s. Given the density made
possible by ACCI with this pulse receiver, the ITRS milestone
of a 110- m pad pitch can be achieved.
In addition, a flip-chip demonstration of ACCI is presented
to show the feasibility of creating coupling capacitors and
buried bumps across the same interface—between chip and
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