Superlattice structure modelling and simulation of high electron mobility transistor with novel device structure M. Ravindiran a,⇑ , P. Shankar b a Department of Electronics and Communication Engineering, India b Saveetha School of Engineering, Saveetha University, Thandalam, Chennai, India article info Article history: Received 23 January 2015 Accepted 16 February 2015 Available online 27 March 2015 Keywords: Dilute magnetic semiconductor (DMS) Superlattice High electron mobility transistor (HEMT) Magnetic tunnel junctions abstract High electron mobility transistor (HEMT) made of CNT channel with magnetic tunnel junctions inserted on both the sides of the channel region before source and drain region is analysed in this paper. The conductivity of the proposed superlattice structure with magnetic tunnel junction is very good when compared to superlat- tice structure without the magnetic tunnel junction. When fabri- cated as a HEMT the device will serve exceedingly well for various applications in electronics. Ó 2015 Elsevier Ltd. All rights reserved. 1. Introduction HEMT’s are becoming very popular in the recent years due to the high operating speed which will match very well with various electronic applications. Normally the electron transport in the bands of the HEMT’s will be based on 2DEG arrangement, due to which the electron scattering is mostly avoided and the electron transport is achieved in two dimensions effectively. Generally the 2DEG is formed in superlattice structures which ideally results in HEMT device. Superlattice structures are of different types such as quasi periodic, and low dimensional superlattices [1,2]. Quantum dots and quantum wires based superlattice structures are considered as low dimensional superlattices. Similarly in the proposed work CNT is used as one of the layers in the superlattice structures. Superlattice structures made of Carbon Nanotube (CNT) play a significant part in electronic devices. http://dx.doi.org/10.1016/j.spmi.2015.02.042 0749-6036/Ó 2015 Elsevier Ltd. All rights reserved. ⇑ Corresponding author. Mobile: +91 9791199547. E-mail address: ravmun@gmail.com (M. Ravindiran). Superlattices and Microstructures 83 (2015) 282–288 Contents lists available at ScienceDirect Superlattices and Microstructures journal homepage: www.elsevier.com/locate/superlattices