Ž . Applied Surface Science 141 1999 219–227 Preparation and characterization of low-dimensional nanostructures L. Augustin, L.F. Chi, H. Fuchs ) , S. Hoppner, S. Rakers, C. Rothig, T. Schwaack, ¨ ¨ F. Starrberg Physikalisches Institut, Westfalische Wilhelms-UniÕersitat, D-48149 Munster, Germany ¨ ¨ ¨ Received 20 July 1998; accepted 1 August 1998 Abstract Low-dimensional nanostructures usable under ambient conditions may provide a way to fulfil increasing demands for ultra-high density storage media, for novel electronic and optoelectronic devices and for miniaturized mechanical structures. In this paper, we present four different methods for producing low-dimensional structures prepared under ambient conditions. Firstly, we show how to produce flat-topped evenly-spaced gold particles on glass. Secondly, we discuss the production and filling of nanopores in mica. Thirdly, we show how to create atom-size electronic nanostructures on the ternary telluride TaNi Te and, lastly, we demonstrate the production of nanometer-size holes on the blue bronze 2 2 Ž . Rb MoO . All of these nano-scale structures are characterized with either STM scanning tunneling microscopy or SFM 0.3 3 Ž . scanning force microscopy . q 1999 Elsevier Science B.V. All rights reserved. PACS: 07.79.C2; 42.82.Cr; 61.16.Ch; 71.45.yd; 79.60.Ju; 81.65.Cf; 82.70.Dd; 87.64.D2; 85.40.Hq Ž . Ž . Keywords: Nanostructures; Scanning tunneling microscopy STM ; Scanning force microscopy SFM 1. Introduction Due to the ongoing miniaturization of electrical components a large interest exists for preparation and characterization methods of nanometer-sized structures. Reliable production of such structures is expected to lead to the development of ‘nanoe- lectronic’ devices, i.e., functional units with linear dimensions in the order of some nanometers. As the behavior of such devices is mainly governed by quantum mechanical principles, new phenomena can be observed like loss-free conduction via ballistic ) Corresponding author. Tel.: q49-251-8333621; Fax: q49- 251-833602; E-mail: fuchsh@nwz.uni.muenster.de electrons or single electron tunneling. These phe- nomena will help to make electronic devices faster, less dissipative and more reliable. However, to achieve such a goal, reliable prepara- tion methods for such small structures and instru- ments for their characterization have to be devel- Ž oped. Scanning probe methods like STM scanning . Ž tunneling microscopy or AFM atomic force mi- . croscopy have the potential to be both in one. With the same method surfaces can be modified and char- acterized. Although nano-structuring of surfaces is fairly reliable, it is often slow due to the serial process involved. Therefore, parallel processes work- ing on the same scale are of extreme importance for technical purposes. 0169-4332r99r$ - see front matter q 1999 Elsevier Science B.V. All rights reserved. Ž . PII: S0169-4332 98 00508-X