Ion electron emission microscopy at SIRAD D. Bisello a , A. Candelori a , P. Giubilato a, * , A. Kaminsky a , S. Mattiazzo a , M. Nigro a , D. Pantano a , R. Rando a , M. Tessaro a , J. Wyss b , S. Bertazzoni c , D. Di Giovenale c a Department of Physics, University of Padova, and INFN Padova, via Marzolo 8, 35131 Padova, Italy b University of Cassino and INFN Pisa, Via F. Buonarroti 2, 56127 Pisa, Italy c University of Tor Vergata, Roma, and INFN Roma, Via della ricerca scientifica 1, 00133 Roma, Italy Available online 7 April 2005 Abstract In this contribution we describe how single event effect (SEE) studies will be performed with the ion electron emis- sion microscope (IEEM) of the SIRAD irradiation facility located at the INFN Legnaro Laboratory. The IEEM will be used to locate with micrometric precision the impact points of impinging ions that give rise to SEE in an electronic device under test (DUT). In the IEEM technique the ion beam is not microfocused: the position of single ion impact is reconstructed by locating the secondary electron emission points on the DUT surface. We briefly review the original solutions under implementation at SIRAD, such as the opto-electronic approach used to reconstruct the secondary electron emission points by means of a fast, high-resolution imaging of point-like light sources, and a new IEEM test system under development based on a commercial memory array sensitive to single event upsets. Ó 2005 Elsevier B.V. All rights reserved. PACS: 61.82.Fk; 61.80.Jh; 29.40.Wk Keywords: Ion electron emission microscopy; Single event effect 1. Introduction: SIRAD, single event effects and IEEM applications The study of the effects of natural and artificial radiation on semiconductor devices is an impor- tant and lively field in scientific and technological research. In particular radiation tolerance is a fun- damental issue for electronic devices and systems in many applications such as nuclear plants, space research, telecommunications, avionics, and high- energy physics. The SIRAD irradiation facility, located at the 15 MV Tandem accelerator of the INFN Laboratory in Legnaro (Italy), is actively dedicated to bulk damage and to single event effect 0168-583X/$ - see front matter Ó 2005 Elsevier B.V. All rights reserved. doi:10.1016/j.nimb.2005.01.036 * Corresponding author. Tel.: +39 49 827 7215; fax: +39 49 827 7237. E-mail address: piero.giubilato@pd.infn.it (P. Giubilato). Nuclear Instruments and Methods in Physics Research B 231 (2005) 65–69 www.elsevier.com/locate/nimb