Journal of Crystal Growth 227–228 (2001) 303–306 GSMBE growth of InP-based MSM/HEMT OEIC structures Jianxin Chen, Aizhen Li*, Yiqiao Chen, Quankui Yang, Xiaojie Chen State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People’s Republic of China Abstract An optoelectronic integrated circuit (OEIC) structure consisting of high electron mobility transistors (HEMT) and a metal semiconductor metal photo detector (MSM-PD) was achieved by gas source molecular beam epitaxy with one growth run. The whole structure consists of an InGaAs/InAlAs MSM PD and InGaAs/InAlAs HEMT preamplifier circuits. An etch stop layer, InP, was inserted between the MSM and HEMT structure, which makes the device process much easier because of the good etch selectivity between InP and InAlAs. The MSM photo-detector, with an active area of 80 Â 80 mm 2 , has the responsivity of 0.62A/W. The DC transconductance of an InGaAs/InAlAs HEMT with 1m gate length is 305mS/mm with threshold voltage of –1.4V. High frequency measurements show that the -3dB bandwidth of the OEIC receiver is 1.0GHz indicating that it can operate at a transmitting rate of 1.3Gb/s. # 2001 Elsevier Science B.V. All rights reserved. PACS: 81.15.Hi; 73.40Kp Keywords: A1. Characterization; A3. Molecular beam epitaxy; B1. Phosphides; B3. Optical fiber devices 1. Introduction Optoelectronic materials and device technolo- gies are key technologies for large capacity and high speed optocommunication systems. These fiber optics systems are in widespread use today for ‘‘long-haul networks’’ spanning oceans and continents as well as local access networks. During these processes, InP based materials have been playing an important role. Firstly, InP based materials are the excellent candidate for optoelec- tronic devices used in optocommunication sys- tems. Optical fibers have the lowest loss at 1.55 mm and lowest dispersion at 1.3 mm. Quaternary alloys InGaAsP and InGaAlAs grown on InP substrates could completely cover the suitable wavelength band for fiber communication systems. Lasers and photodetectors based on the InP material systems now dominate the commercial market for fiber optics systems in this wavelength range. Secondly, InP based materials are a good candidate for high- speed electronic devices and circuits. InGaAs, compared to GaAs, has a smaller electron effective mass, higher electron mobility and higher peak drift velocity. InGaAs/InAlAs heterostructures, compared to GaAs/AlGaAs heterostructures, have larger conduction band offset and hence achieve higher two-dimensional electron gas (2DEG) density. Therefore, electronic devices, such as high electron mobility transistors (HEMT) [1–3], based *Corresponding author. Tel.:+86-21-62511070; fax:+86- 21-62513510. E-mail address: azli@itsvr.sim.ac.cn (J. Chen). 0022-0248/01/$-see front matter # 2001 Elsevier Science B.V. All rights reserved. PII:S0022-0248(01)00710-2