Electrical Characterization of NIR OLED Fabricated Using a Linear Oligomer Mohammad Taghi Sharbati 1 , Farzin Emami 1 and Mohammad Navid Soltani Rad 2 1 Department of Electrical and Electronics Engineering, Shiraz University of Technology, Shiraz, Iran 1 Department of Chemistry, Shiraz University of Technology, Shiraz, Iran sharbati@oicc.ir Abstract- In this study we have fabricated a single-layer NIR OLED by a new luminescent material. The characteristics of this diode is considered at different thicknesses. Electroluminescence is observed with the peak at 790 nm. ©2010 Optical Society of America OCIS codes: (160.4890) Organic materials; (160.4670) Optical materials 1. INTRODUCTION In recent years, OLEDs are considered as a new kind of full-color flat-panel displays technology since the initial work by Tang and VanSlyke [1]. Organic light-emitting diodes (OLEDs) in the visible spectrum region have achieved significant progress since 1987[1]. Near-infrared (NIR) and infrared (IR) OLEDs have also received growing attention because of their applications in information processing [2], night-vision readable displays [3]. So far the IR and NIR organic light-emitting material that have been reported include organic ionic dyes, organic molecules, organic rare-earth complexes, and organic ligands and semiconductor nano particles with organic substituents [4-12]. 2. Excremental Setup and results In this article we realized NIR OLEDs based on a new NIR organic dye as an emissive layer by thermal evaporation technique. A new red emission material, (E)-N-((8E, 16E)-3-((E)-(4-((E)-4-methoxystyryl) phenylimino) methyl) benzylidene)-4-((E)-4-methoxystyryl) benzenamine, was synthesized. Chemical structure, molecular surfaces and absorption spectrum of this organic dye molecule are shown in Fig. 2. Fig. 2. a) Molecular structure of the dyes used. b) Optimized geometry calculation showing surface molecular structure of the material by AM1 Calculation. c) Absorption spectrum of molecule Circular devices with 2 mm diameter were made on 2cm × 2cm ITO slides. The active area of each device was 7.1 mm 2 . OLEDs are fabricated on a glass substrate pre-coated with indium tin oxide (ITO) with a sheet resistance of 20 Ω/□ and a thickness of about 100 nm. Its work function is about 3.68 eV. The ITO substrate is washed and cleaned using acetone, ethanol and distilled water respectively. Then, NIR dye was deposited on ITO by using thermal evaporation technique at 4×10 -6 torr under vacuum condition without any annealing. The deposition rate and thicknesses were 1.4 nm/sec, and 40 nm respectively. Finally by means of a shadow mask made of stainless steel which has circular holes in 3 mm diameter, a 100 nm thick Al cathode was deposited by thermal evaporation technique at a pressure of 4×10 -6 torr. Using a deposition rate of 3 nm/sec. The thickness of each layer was determined by a quartz thickness monitor. The current (I) versus voltage (V) characteristics and EL spectra were measured. All the measurements were carried out under ambient atmosphere at room temperature. The EL spectra of glass/ITO/NIR dye/Mg device are shown in Fig. 3a at different voltages. Same EL spectral peak at 790 nm were observed at different bias voltages, showing stable spectral characteristics with voltages. The CIE coordinate (1931) (0.48, 0.3701) is shown in Fig. 3b. a891_1.pdf OSA / ANIC/SOLED 2010 JWA9.pdf JWA9.pdf