Microelectronics Journal 38 (2007) 388–391 An in situ technique to measure gold resistance oscillations during the first stages of growth G.M. Alonzo-Medina 1 , A.I. Oliva à Centro de Investigacio´n y de Estudios Avanzados del IPN, Unidad Me´rida, Departamento de Fı´sica Aplicada, A.P. 73-Cordemex, 97310Me´ridaYucata´n,Me´xico Received 31 October 2006; accepted 8 January 2007 Available online 1 March 2007 Abstract An experimental technique developed for measuring the oscillating behavior of the electrical resistance during the first stages of growth of thin gold films deposited on silicon (1 0 0) substrate is described. The in situ technique uses the small electrical resistivity of the Si substrate to apply a fixed voltage through it and measure the electrical current generated during film growth. Thermal evaporation of gold at very low deposition rates produces changes on the electrical current which can be acquired meanwhile the first atoms impinges on the substrate. High precision and repeatability were achieved with the proposed method as demonstrated with the measured oscillating behavior of the resistance. The implemented technique and the obtained results could be useful to compare the proposed theoretical models to explain this behavior. r 2007 Elsevier Ltd. All rights reserved. Keywords: Resistance oscillation; Nanostructures; Gold-thin films; Thermal evaporation 1. Introduction Nanotechnology is actually a strong promise in the electronic industry because of the small devices and the amazing type of devices surged recently. Several reports have demonstrated that certain physical properties at nano-sizes are very far from the bulk properties reported in the traditional textbooks. Electrical, thermal and mechanical properties are pending matter to be solved for nano-dimensions. However, important advances on this address can be found in the literature. Electrical resistance is one of the oldest properties studied for thin film materials. The classical model of Thomson [1] reported in 1901, the refined model of Fuchs and Sondheimer [2,3] and the most recent quantum model of Mayadas and Shatzkes [4,5], try to explain the higher values of the electrical resistivity measured on thin films but not the oscillatory behavior. It is known that the electrical resistivity enhances by the surface scattering when the film is thinner than the mean free path of the free carriers. Palasantzas et al. [6] proposed a theoretical model to describe the electrical conductivity s considering the thin film-dynamic growth. They explain that the quantum size effect oscillation on s is more easy for metals than for semiconductors by the smaller Fermi wavelength found in metals. However, the surface roughness of the film thickness and the substrate acquired during growth plays an important role for oscillation, being better when the Schwoebel barrier dominates on the large length scales. Thus, the implemen- ted techniques to prepare and to characterize the electrical resistivity are key factors to obtain reliable results. Jalochowski and Bauer [7] reported the resistivity oscilla- tion of Au single crystalline layers on Si(1 1 1) substrate, but not on Ag crystals for the first 10–14 monolayers. The explanation is attributed to the higher perfection on the Ag films, associated with the results obtained with the RHEED technique. However, as authors mentioned, the first few monolayers can give us the key to explain the discrepancy. Experimental efforts published on oscil- lating resistance were made by Iida et al. [8] on Ti films growth on different glass roughness. Measurements were made on vacuum conditions and room temperature. A ARTICLE IN PRESS www.elsevier.com/locate/mejo 0026-2692/$ - see front matter r 2007 Elsevier Ltd. All rights reserved. doi:10.1016/j.mejo.2007.01.002 à Corresponding author. Tel.: +52 9991 24 2136; fax: +52 9999 81 2917. E-mail address: oliva@mda.cinvestav.mx (A.I. Oliva). 1 FI-UADY, Me´rida Yucatan Me´xico.