International Conference on Smart Materials Structures and Systems January 04-07, 2012, Bangalore, India Analysis of I-V Characteristics of MOSFETs with Technology Scaling using COMSOL and TANNER EDA Tools Yash Agrawal #1 , Rajeevan Chandel #2 , Rohit Dhiman #3 , Harshit Agarwal #4 1 mr.yashagrawal@gmail.com, 2 rajeevanchandel@gmail.com, 3 rohitdhiman.nitham@gmail.com, 4 harshit@birlainstitute.co.in # Department of Electronics & Communication Department National Institute of Technology, Hamirpur 177 005 Himachal Pradesh India ABSTRACT In the present paper, the current-voltage characteristics of MOSFETs are analyzed by using COMSOL and Tanner electronic design automation tools for 180nm, 130nm, 100nm and 45nm technology nodes. The analysis shows an increase in current density with technology scaling. The results show the versatility of both the tools for performance analysis of MOSFETs. Keywords: MOSFET, EDA, COMSOL, Tanner. 1. INTRODUCTION The advancements in micro-fabrication techniques have led to scaling of metal oxide semiconductor (MOS) devices. The reduction of the size, i.e. the dimensions of MOS field effect transistors (MOSFETs), is commonly referred to as scaling. As transistors become miniaturized, they switch faster, requires less area and delay decreases. However, due to scaling, current and power dissipation increases and various short channel effects such as drain induced barrier lowering, charge sharing, velocity saturation, mobility degradation, increase in sub threshold current extra crop up [1-4]. In the present work n-MOSFETs are analyzed for four different technology nodes viz. 180nm, 100nm, 130nm and 45nm. The analysis is carried out using COMSOL and Tanner electronic design automation (EDA) tools. For this various boundary and initial conditions have been specified. The Poisson equation, recombination, drift and diffusion currents have been considered. Current-voltage characteristics are analyzed to study the effect of technology scaling on MOSFET performance. 2. MOSFET IMPLEMENTATION USING COMSOL The MOS devices are simulated using COMSOL and the various conditions are defined. For the same the following steps are utilized.