Journal of Electron Spectroscopy and Related Phenomena 180 (2010) 1–5
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Journal of Electron Spectroscopy and
Related Phenomena
journal homepage: www.elsevier.com/locate/elspec
Formation of self-organized Ta nano-structures by argon ion
sputtering of Ta foil: XPS and AFM study
V.R.R. Medicherla
∗
, S. Majumder, D. Paramanik, Shikha Varma
Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
article info
Article history:
Received 15 May 2009
Received in revised form 25 January 2010
Accepted 11 February 2010
Available online 19 February 2010
PACS:
81.16.Rf
73.22.-f
77.55.+f
79.60.-i
07.79.Lh
Keywords:
Nano-structures
High dielectric oxides
Ion sputtering
XPS
Surface core level
AFM
Surface morphology
abstract
The nano-structured Ta has been prepared by 3 keV argon ion sputtering of the Ta foil. The XPS and AFM
studies were carried out on samples sputtered for fluences ranging from 6.0×10
15
to 3.6×10
16
ions/cm
2
.
The sample sputtered at lowest fluence showed the formation of dimples along with mild ripples which
disappeared on further sputtering. After prolonged sputtering, clear ripple formation has been observed
with a wave length of about 80 nm. Our XPS results indicated that Ta 4f of the Ta liberated after sput-
tering is shifted to higher binding energy by 0.5 eV. The Ta
2
O
5
completely disappeared after prolonged
sputtering for 60 min, but little amount of sub-Ta oxide (TaO
x
) is still seen.
© 2010 Elsevier B.V. All rights reserved.
1. Introduction
Tantalum and its compounds have extensively been studied
due to their numerous technological applications such as thin film
resistor materials with low temperature coefficient of resistivity
[1], oxygen sensors [2], erosion and corrosion resistance coatings
[3], and as a high dielectric (high k) material in metal-oxide-
semiconductor devices [4]. Tantalum thin films are used as print
head heaters [5], photo-catalysts [6] and hard coatings on tools [7],
etc.
Ta nano-structures have become very important both from tech-
nological and fundamental point of view. Nano-scale tantalum
powder has been widely studied for a variety of applications. For
example, superfine and pliable tantalum powders can be utilized
to improve the quality and reduce the package size of capacitors
∗
Corresponding author. Present Address: Department of Physics, Institute of
Technical Education and Research Siksha ‘O’ Anusandhan University Jagamara,
Bhubaneswar 751030, India. Tel.: +91 674 2350181; fax: +91 674 2351880.
E-mail address: ramarao@iopb.res.in (V.R.R. Medicherla).
used in memory devices. The super-conducting properties of Ta
are expected to depend on the size of the nano-clusters. It would
be a very challenging task to produce Ta nano-clusters without the
interstitial impurities.
Preparation of nano-tantalum by physical methods is extremely
difficult due to its high melting point of 2996
◦
C. Several chemical
methods were used to synthesize tantalum powder of few micron
size from TaCl
5
or K
2
TaF
7
[8]. In recent years many different meth-
ods have been proposed and tested to produce nano-structures on
solid surfaces [9]. A well ordered Ta surface with dimples of tens
of nanometers in size has been observed by electropolishing the
Ta foil [10]. The single crystalline nano-tantalum powder has been
prepared by Wang et al. [11] using hydrogen arc plasma method.
Among these methods, low energy ion bombardment has emerged
as a simple and practical technique to produce nano-scale patterns
on metallic surfaces [12].
The morphological evolution of the surface, during low energy
ion sputtering is rather a complex issue. However, in nanotechnol-
ogy, ion beam sputtering is frequently regarded as an alternative
process for the formation of self-organized nano-patterns. This pat-
tern formation is related to the surface instability between the
0368-2048/$ – see front matter © 2010 Elsevier B.V. All rights reserved.
doi:10.1016/j.elspec.2010.02.006