Journal of Crystal Growth 284 (2005) 184–189 The effect of LaNiO 3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr 0.53 Ti 0.47 O 3 films G.S. Wang a,b,Ã , D. Re´miens a , C. Soyer a , E. Dogheche a , E. Cattan a a IEMN–DOAE–MIMM team, CNRS UMR 8520, Bat. P3, Cite´ scientifique, Villeneuve d’Ascq 59655, France b National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese cademy of Sciences, Yutian Road 500, Shanghai 200083, PR China Received 23 December 2004; received in revised form 9 June 2005; accepted 11 July 2005 Available online 15 August 2005 Communicated by M. Kawasaki Abstract The(100)orientedLaNiO 3 (LNO) films with different thickness were prepared on SiO 2 /Si substrate by a modified metallorganic decomposition process. PbZr 0.53 Ti 0.47 O 3 (PZT) films (1 mm) subsequently deposited on LNO by modified sol–gel process. The X-ray diffraction measurements show PZT films exhibit a single perovskite phase with (100) preferred orientation. a 100 494% can be obtained for PZT deposited on LNO bottom electrode with thickness greater than 60nm. SEM measurements show the PZT films have a columnar structure. The LNO thickness effect on P r , E c , and dielectric constant were investigated and showed that the thickness of the LNO bottom electrode caused drastic changes in P r , dielectric constant and dielectric loss. Sub-switching fields dependence of permittivity were investigatedforPZTfilmsandshowedthatbothreveribleandirreversiblecomponentofthepermittivityincreasewith the thickness of LNO electrode. r 2005 Elsevier B.V. All rights reserved. PACS: 61.10.Nz; 77.84.Dy; 81.20.Fw Keywords: A1. X-ray diffraction; B1. Perovskite; B2. Ferroelectric materials 1. Introduction The coexistence of tetragonal and rhombohe- dral phases in pseudo-perovskite PbZr 0.53 Ti 0.47 O 3 (PZT) with a composition near the morphotropic phaseboundary(MPB)enhancesthedielectricand ARTICLE IN PRESS www.elsevier.com/locate/jcrysgro 0022-0248/$-see front matter r 2005 Elsevier B.V. All rights reserved. doi:10.1016/j.jcrysgro.2005.07.014 Ã Corresponding author. IEMN–DOAE–MIMM team, CNRSUMR8520,Bat.P3,Cite´ scientifique,Villeneuved’Ascq 59655,France.Tel.:+330320434018;fax:330327511439. E-mail address: Genshui.Wang@univ-lille1.fr (G.S. Wang).