Journal of Alloys and Compounds 397 (2005) 9–16
Electrical and optical properties of epitaxial YH
x
switchable mirrors
S. Enache
∗
, T. Leeuwerink, A.F.Th. Hoekstra, A. Remhof, N.J. Koeman, B. Dam, R. Griessen
Faculty of Sciences, Department of Physics and Astronomy, Condensed Matter Physics, Vrije Universiteit,
De Boelelaan 1081, 1081 HV Amsterdam, The Netherlands
Received 20 November 2004; accepted 7 December 2004
Available online 13 March 2005
Abstract
Epitaxial YH
x
switchable mirrors are characterized by micrometer-size domains delineated by a self-organized triangular network of ridges.
On a macroscopic scale, the epitaxial films exhibit similar optical switching properties as the polycrystalline ones constituted of nanometer-size
domains, although the microscopic domains switch independently. Their electrical transport properties are, however, different from those of
polycrystalline films. Near the trihydride state, although the optical gaps of epitaxial and polycrystalline films are essentially the same, the
electrical resistivity of epitaxial films is much lower. This is due to the metallic ridges in the epitaxial films, which are also responsible for a
large in-plane anisotropy of the Hall voltage (i.e., up to 35% at 3 K in YH
∼3
). In the dihydride state, the temperature dependence of the optical
transmission of both films is reminiscent of that exhibited by their electrical conductivity, σ(T ). These features can be understood in a Drude
model for free electrons, in which the only temperature-dependent parameter is the scattering time, τ .
© 2005 Elsevier B.V. All rights reserved.
Keywords: Electronic transport; Hydrogen storage materials; Thin films
1. Introduction
In 1996, Huiberts et al. [1] discovered that polycrystalline
Y and La films, covered with a thin Pd layer, switch reversibly
from shiny metallic to transparent semiconductors upon H
absorption. Polycrystalline Y films consist of ∼200-nm size
domains which are largely c-axis-oriented and do not show in-
plane ordering [2]. The epitaxial Y films, grown on CaF
2
[3]
or Nb buffer layers on Al
2
O
3
[4] or on W substrates [5], con-
sist of ∼10-m size domains, which are highly oriented along
the c-axis and also, exhibit in-plane ordering. These domains
are separated by a triangular network of ridges (∼200 nm in
width) [6]. The ridges develop during growth as a result of the
mismatch of the film with the substrate [7]. More ridges are
formed during the – and – transformations upon H ab-
sorption [8]. Using transmission electron microscopy (TEM),
Kooi et al. showed that the ridges are crystalline with the c-
axis almost in-plane [9]. They result from {10 12} deforma-
tion twinning [9]. Remarkably, the ridges act as a barrier for
∗
Corresponding author.
E-mail address: enchul@yahoo.com (S. Enache).
lateral H diffusion and as a sort of microscopic lubricant for
the domain switching.
On a microscopic scale, the epitaxial domains switch es-
sentially independently from each other [6], while the ridges
switch collectively at a different rate; upon H absorption (or
desorption), the H concentration within the ridges is smaller
than that of the adjacent domains. This is completely different
from polycrystalline films which switch homogeneously. On
a macroscopic scale, both films exhibit astonishingly similar
features upon H absorption, i.e., a large increase in electrical
resistivity and a transition from shiny metallic to transparent
yellowish semiconducting. Despite that, the epitaxial YH
3
films have a much lower electrical resistivity and a slightly
larger optical gap than the polycrystalline ones loaded under
similar conditions (e.g., 1 bar H
2
at room temperature).
Much is known about the fabrication [2], optimization
[10], structural quality [2], electrical and optical properties
[11] of polycrystalline Y films upon H absorption at room
temperature. Also, the temperature dependence of the
electrical resistivity and Hall effect of polycrystalline YH
x
films (with 0 <x< 3) are well documented in literature
[12,13]. However, the temperature dependence of the optical
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doi:10.1016/j.jallcom.2005.01.039