Low Area FSM-Based Memory BIST for
Synchronous SRAM
Nur Qamarina Mohd Noor, Yusrina Yusof, Azilah Saparon
Department of Electronic,
Faculty of Electrical Engineering,
Universiti Teknologi MARA,
40000, SHAH ALAM, MALAYSIA
Abstract- As the memory enters submicron technology, new
test algorithm that will be able to give a better fault coverage
such as to detect all intra-word coupling fault (CF) has been
widely developed. In order to implement this algorithm to the
memory, test technique such as BIST is utilized. Common types
of memory built-in-self test (MBIST); microcode-based MBIST
and FSM-based MBIST. The popular approach of designing
various kind of MBIST architectures are either by targeting to
reach specific testing requirement such as on full speed and at
speed or by considering the cost-constraint and area overhead
such low-cost or low-area design. In this paper, FSM-based BIST
is designed to be able detecting all intra-word coupling fault (CF)
in a synchronous SRAM under low- area constraint of test
requirement.
I. INTRODUCTION
Several MARCH test algorithms [1] are developed to
detect intra-word coupling fault in word oriented memories
(WOM). As high-volume production and a very low defect-
per-million (DPM) level is taking into consideration, new
systematic technique of generating data background sequences
(DBS) for single cell fault and inter-word CF and DBS for
each intra-word fault and the development of the new DBS
(MARCH SAM) [2] that will be able to test all types of intra-
word faults is introduced.
The above test algorithms must be implemented for
memories testing by using certain test techniques. One of the
popular test techniques is built-in self-test (BIST). A memory
BIST (MBIST) consists of a controller to control the flow of
test sequences and other components to generate the necessary
test control and data. It could be programmable or non-
programmable and also could be designed as Finite State
Machine (FSM)-based or microcode-based controller [3]-[8].
In FSM-based memory BIST controller, counters are the key
component especially in FSM-based memory BIST controller
but some FSM-based BIST controller [3] excluded counter
from its design. Usually different counters [4], [6] are used to
generate the address, test data and read/write sequences. FSMs
used in the BIST controller in [4] are run sequentially one
after another while in [6], the flexibility of applying different
test algorithm in FSM-based BIST controller is introduced.
Two types of FSM-based BIST controller architectures are
proposed in [5]. Both are designed by using a counter for the
test pattern generator and test controller but one is using MISR
which is a part of the BIST controller block for output
response analyzer (ORA) while another one is using
comparator which acts as an external block in the BIST
system for ORA.
However, designing by using multiple counters and by not
including ORA in the BIST controller such as in [4]-[6] would
certainly increase the area overhead. Thus, in this paper, a
BIST controller circuit that operates on one counter and
combined ORA must is proposed to reduce area while
maintaining acceptable speed.
This paper is organized as follows. In the next section, the
proposed MBIST architecture is introduced. The experimental
results are discussed in the Section 3 while Section 4
concludes the paper.
II. PROPOSED BIST ARCHITECTURE
Based on [3]–[6], the design of FSM-based MBIST using
MARCH SAM for WOM is developed. The characteristics of
the design are as following
a. Application of unicounter to run loop of the address
generator, data generator and read/write sequences.
b. Implementation of nested loop FSMs where all FSMs
run concurrently.
c. Immediate analysis of output by comparing it right
after each BIST sequence and the pass/fail flag is up
based on the output.
d. Flexibility in changing test pattern because it is
stored in read-only memories (ROM).
Fig. 1 shows the block diagram of the proposed design.
The design consists of SRAM test controller block, SRAM
behavioral block and ROMs.
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