1 3 Microsyst Technol DOI 10.1007/s00542-013-2046-y TECHNICAL PAPER Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber N. Zieyana Mohamed Annuar · Mohd Faizul Mohd Sabri · A. Shuhaimi Abu Bakar Received: 17 October 2013 / Accepted: 12 December 2013 © Springer-Verlag Berlin Heidelberg 2014 is influenced more by the temperature distribution and geometry of the chamber. The numerical study of horizon- tal MOHVPE growth shows a function of temperature and species flow rates has been performed with specific condi- tion to find the ideal position of the substrate for growth process in future. 1 Introduction Nowadays, semiconductor industry move step ahead in development thin films (Narayan and Wang 2002). It devel- oped the layers on the wafer to produce a semiconductor component. Metal Organic Chemical vapor deposition (MOCVD) of a thin single-crystal silicon film is growth on single-crystal silicon substrate of the same crystal- lographic orientation. While further perfected to growth thick layer of wafer is perform in halide vapor-phase epi- taxy (HVPE) method. In both research and industrial field, Metal Organic Vapor Phase Epitaxy (MOVPE) has devel- oped into a viable and necessary technique for production of semiconductor device layers. The epitaxial structure is the heart of the semiconductor device layer and MOVPE is considered the enabling technology for epitaxial growth of compound semiconductor devices. Based on previous research, the insufficiency of this method which is MOVPE and HVPE are identified. Lack of uniformity wafer curvature produced caused by lattice mis- match that came from MOVPE method (Taiyo et al. 1998). Thermal expansion will affect the maximum crack occurs and nevertheless the threading dislocation will appear in minimum stage inside growth chamber (Taiyo et al. 1998). These happen when GaN was reacting with sapphire as substrate. Further improvement is carried out in HVPE method by using GaN to replace sapphire as substrate, after Abstract Over the last few decades, there was a substan- tial appeal on the growth of gallium-nitride (Ga-N) based alloy for high performance optoelectronic devices such as blue/violet laser diode, blue/white light emitting diode etc. In the recent years, there have been revolutionary changes in semiconductor field. Growth method for GaN-based film has been extensively explored, with success of thick film growth using halide vapor-phase epitaxy technique. The theoretical changes were attributed from the experimental results where modeling was vastly used for the purpose of design of equipment. This is because of the cost of the equipment and it is one of the major burdens in semicon- ductor processing. This process constitutes an important technology for manufacturing thin solid film in the semi- conductor industry. To address these issues, a new devel- opment called metal organic halide vapor phase epitaxy (MOHVPE) reactor has been proposed in this study. Mod- eling with five inlet nozzles with 54 cm long is designed by design software. The numerical study of horizontal MOH- VPE growth shows dependence on temperature and spe- cies flow rates. The inlet area is set to room temperature while the whole chamber is set in the temperature range from 1,273 to 1,473 K. Growth process reactor geom- etry that involved with temperature distribution stabiliza- tion and uniformity control flow pattern between the sub- strate holder are discussed. It is seen that the flow pattern N. Zieyana Mohamed Annuar (*) · M. F. M. Sabri Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia e-mail: nzieanaz@gmail.com A. Shuhaimi Abu Bakar Department of Physics, Faculty of Science, Low Dimensional Research Centre, University of Malaya, 50603 Kuala Lumpur, Malaysia