Ž . Diamond and Related Materials 10 2001 993997 Electron paramagnetic resonance study of ion implantation induced defects in amorphous hydrogenated carbon B.J. Jones a, , R.C. Barklie a , R.U.A. Khan b , J.D. Carey b , S.R.P. Silva b a Physics Department, Trinity College, Dublin 2, Ireland b School of Electronic Engineering, I.T. and Mathematics, Uni ersity of Surrey, Guildford, GU2 7XH, UK Abstract Ž . Ž . Electron paramagnetic resonance EPR measurements have been made of defects in amorphous hydrogenated carbon a-C:H thin films. The films were grown on silicon substrates on the earthed electrode of an rf-powered plasma enhanced chemical vapour deposition reactor and were subsequently implanted with a range of doses of boron, carbon or nitrogen ions with energies Ž. from 20 keV to 32.5 keV. Two paramagnetic centres are observed, the carbon defect in the film with g 2.0028 1 and a silicon Ž. defect in the substrate with g 2.0058 6 . The volume concentration of the carbon defect increases approximately linearly with dose, from approximately 3 10 17 cm 3 for unimplanted samples to 2.7 10 20 cm 3 at the highest implantation of 2 10 16 B 2 Ž . ions cm . The increase in dose over this range also causes a narrowing of the EPR line from 0.83 mT to 0.13 mT and a Ž 5 8 . significant decrease in the spin-lattice relaxation time from 3 10 s to 6 10 s which approaches the spin spin relaxation time at the highest dose. The narrowing is attributed to motional averaging produced by either exchange or hopping. We also report the effects of annealing samples implanted with a range of boron doses. The prime novelty of this paper is that it is the first EPR study of defects produced by the implantation of a range of ions into polymer-like amorphous hydrogenated carbon. 2001 Elsevier Science B.V. All rights reserved. Keywords: Amorphous hydrogenated carbon; Defect; Ion implantation; Annealing 1. Introduction The unimplanted material under study in this work is Ž . ‘polymer-like’ amorphous carbon PAC , one of the many different forms of hydrogenated amorphous car- Ž . bon a-C:H that can be prepared. This has a high Ž . hydrogen content 50 at.% , a wide band gap, a high sp 3 content and a strong room temperature photolumi- nescence 1 3 , which probably reflects the compara- Corresponding author. Tel.: 353-1-6081988; fax: 353-1- 6711759. Ž . E-mail address: bjones@tcd.ie B.J. Jones . tively low unpaired spin density of the order of 10 17 3 cm 4 in this type of carbon film. Ion implantation is one method by which ion species can be added to the film. Utilising this method enables the controlled addi- tion of a known quantity and distribution of ions; further advantages are the lack of significant alloying of the material and the wide range of possible ions 5,6 . In previous works 6,7 measurements were made of the optical band gap, conductivity, hydrogen content and refractive index of ion implanted PAC films. In this Ž . paper we use electron paramagnetic resonance EPR to study for the first time the effect of varying implan- tation dose on the population and nature of defects in PAC films, including measurements of the relaxation 0925-963501$ - see front matter 2001 Elsevier Science B.V. All rights reserved. Ž . PII: S 0 9 2 5 - 9 6 3 5 00 00364-2