See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/250352415 Growth and Properties of SiC On-Axis Homoepitaxial Layers Article in Materials Science Forum · April 2010 DOI: 10.4028/www.scientific.net/MSF.645-648.83 CITATIONS 5 READS 12 7 authors, including: Some of the authors of this publication are also working on these related projects: The Terahertz Materials Analysis Center View project Growth of metastable ternary group III-nitride semiconductor nanostructures by unique design concepts and doping View project Jawad Ul Hassan Linköping University 97 PUBLICATIONS 601 CITATIONS SEE PROFILE Peder Bergman Linköping University 374 PUBLICATIONS 4,800 CITATIONS SEE PROFILE A. Henry Linköping University 336 PUBLICATIONS 3,916 CITATIONS SEE PROFILE Patrick Mcnally Dublin City University 219 PUBLICATIONS 942 CITATIONS SEE PROFILE All content following this page was uploaded by Jawad Ul Hassan on 23 July 2015. The user has requested enhancement of the downloaded file.